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首页> 外文期刊>IEEE Transactions on Components and Packaging Technologies >Finite element analysis of interface cracking in semiconductor packages
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Finite element analysis of interface cracking in semiconductor packages

机译：半导体封装界面裂纹的有限元分析

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The application of enriched crack tip finite elements for the prediction of interface fracture parameters, e.g., strain energy release rate and mixed mode stress intensity factors, is presented. Of particular interest, is the comparison between fracture results obtained from two-dimensional (2-D) models and related three-dimensional (3-D) (generalized plane strain) calculations. These results show that for thermal cycling problems, one cannot anticipate 3-D fracture results based on 2-D calculations alone, i.e., plane stress, plane strain, and axisymmetric models. On the other hand, it is shown that the 2-D models are quite adequate for modeling interface fracture in the case of pressure loading on the interface, e.g., pressure due to water vapor expansion during solder reflow. The fracture results presented in this paper were obtained using special enriched crack tip elements that contain the analytic asymptotic displacement and stress field. Enriched crack tip elements for 2-D and 3-D elements are shown to provide highly accurate results for simulating debonding in semiconductor packages subjected to thermal cycling and/or moisture absorption.
机译：介绍了富集的裂纹尖端有限元在预测界面断裂参数（例如应变能释放率和混合模式应力强度因子）中的应用。特别有趣的是，从二维（2-D）模型获得的断裂结果与相关的三维（3-D）（广义平面应变）计算之间的比较。这些结果表明，对于热循环问题，不能仅基于2-D计算即平面应力，平面应变和轴对称模型来预测3-D断裂结果。另一方面，表明2-D模型对于在界面上的压力负载（例如，在焊料回流期间由于水蒸气膨胀引起的压力）的情况下的界​​面破裂建模是足够合适的。本文介绍的断裂结果是使用包含分析渐进位移和应力场的特殊富集裂纹尖端单元获得的。示出了用于2-D和3-D元素的富集裂纹尖端元件，可提供高度准确的结果，以模拟经受热循环和/或吸湿作用的半导体封装中的剥离。

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