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Structural and Optical Properties and Relaxation Process of Pulsed Laser Grown and Annealed Mo-doped ZnO Nanostructures

机译：脉冲激光生长和退火的Mo掺杂ZnO纳米结构的结构和光学性质及弛豫过程

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摘要

ZnO is a well-known good transparent conducting oxide (TCO), which becomes a donor-type semiconductor when doped with Al, In, Ga or Zr impurities. ZnO-based TCO nano-structures exhibit room temperature electrical conductivity of the order of 10-4 /cm., which is comparable to SnO2: In, i.e. Indium doped Tin Oxide (ITO). The need for an alternative to ITO in the growing solar cell and flat panel display markets previously drove the studies of ZnO-based TCO because their low cost and absence of toxicity are attractive factors compared to ITO. Furthermore, the synthesis methodology should allow large coatings for flat panels and solar cells applications specifically. This contribution reports on the structural and opto-electronics properties of ZnO:Mo nano-structures in the ultraviolet, visible and infrared deposited by pulsed laser deposition on borosilicate substrate. The structural investigations carried out by means of x-ray diffraction technique (XRD) showed that the polycrystalline film have a hexagonal (Würtzite) structure with lattice parameter a and b of 3.242 and 5.176? respectively. The UV-Visible transmission is more than 80%, while the IR transmission is less than 10% showing the highly transparent and conducting properties of the films thereby appropriate for opto-electronic windows.
机译：ZnO是众所周知的良好的透明导电氧化物（TCO），当掺杂有Al，In，Ga或Zr杂质时，它将成为施主型半导体。 ZnO基TCO纳米结构的室温电导率约为10-4 / cm。，可与SnO2：In（即铟掺杂的氧化锡（ITO））相媲美。增长的太阳能电池和平板显示器市场对ITO的替代需求以前推动了基于ZnO的TCO的研究，因为与ITO相比，其低成本和无毒性是有吸引力的因素。此外，合成方法应允许专门用于平板和太阳能电池的大型涂料。该贡献报道了通过脉冲激光沉积在硼硅酸盐衬底上的紫外线，可见光和红外线中ZnO：Mo纳米结构的结构和光电特性。用X射线衍射技术（XRD）进行的结构研究表明，多晶膜具有六方晶（纤锌矿）结构，晶格参数a和b为3.242和5.176?。分别。紫外可见透射率大于80％，而红外透射率小于10％，显示出膜的高度透明和导电特性，因此适用于光电窗。

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