Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium

H. Yu; M. Schaekers; T. Schram; W. Aderhold; A. J. Mayur; J. Mitard; L. Witters; K. Barla; N. Collaert; N. Horiguchi; A. Voon-Yew Thean; K. De Meyer

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Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium

机译：p型锗上的低电阻钛触点和热不稳定的锗化镍触点

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Ti/p-Ge and NiGe/p-Ge contacts are compared on both planar- and fin-based devices. Ti/p-Ge contacts show low contact resistance, while NiGe/p-Ge devices show short circuit problems due to thermally driven Ni diffusion. Considering the thermal budget in the standard backend of line processing for CMOS, Ti is more suitable for p-Ge devices. A low Ti/p-Ge contact resistivity of is achieved by using a multi-pulse laser annealing technique for B activation.

机译：在基于平面和基于鳍的器件上都比较了Ti / p-Ge和NiGe / p-Ge触点。 Ti / p-Ge触点显示出低接触电阻，而NiGe / p-Ge器件由于热驱动Ni扩散而显示出短路问题。考虑到标准的CMOS线路处理后端的热预算，Ti更适合于p-Ge器件。通过使用多脉冲激光退火技术进行B活化，可实现低的Ti / p-Ge接触电阻率。

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来源
《IEEE Electron Device Letters》 |2016年第4期|482-485|共4页
作者
H. Yu; M. Schaekers; T. Schram; W. Aderhold; A. J. Mayur; J. Mitard; L. Witters; K. Barla; N. Collaert; N. Horiguchi; A. Voon-Yew Thean; K. De Meyer;
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作者单位

Hao Yu is with the Department of Electrical Engineering, Katholieke Universiteit (K.U.), 3001 Leuven, Belgium, and also with imec, 3001 Leuven, Belgium.;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Contact resistance; contact resistivity; germanide; p-type germanium; transmission line model;

机译：接触电阻;接触电阻率;锗化物;p型锗;传输线模型;

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1. Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN [J] . V Rajagopal Reddy, Sang-Ho Kim, June O Song, Semiconductor science and technology . 2003,第6期

机译：与p型GaN的低电阻和热稳定Pd / Re欧姆接触
2. Low-Resistance and Thermally Stable Pd/Ru Ohmic Contacts to p-Type GaN [J] . Ja-Soon Jang, Chang-Won Lee, Seong-Ju Park, Journal of Electronic Materials . 2002,第9期

机译：与p型GaN的低电阻和热稳定Pd / Ru欧姆接触
3. Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors [J] . Gajula D. R. Applied Physics Letters . 2012,第19期

机译：用于无注入锗p沟道金属氧化物半导体场效应晶体管的锗化镍肖特基源极/漏极触点的低温制备和表征
4. Surface characterization of nickel germanides for Schottky source/drain contacts to germanium p-MOSFETs [C] . Gajula D. R., McNeill D. W., Coss B. E., 2011 International Semiconductor Device Research Symposium . 2011

机译：用于锗p-MOSFET的肖特基源极/漏极触点的锗化镍的表面特性
5. Ohmic Contacts to Homoepitaxially Grown P-Type and N-Type Germanium [D] . ?Kumar, Ankit 2020

机译：欧姆触点是同性境生长的p型和n型锗
6. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance [O] . Hsun-Ming Chang, Adam Charnas, Yu-Ming Lin, -1

机译：超低接触电阻的黑色磷场效应晶体管中的掺锗金属欧姆接触
7. Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium [O] . Yu Hao, Schaekers Marc, Schram Tom, 2016

机译：p型锗上的低电阻钛触点和热不稳定的锗化镍触点
8. Contact Resistance of Nickel/Germanium/Gold, Palladium/Germanium/Titanium/Platinum, and Titanium/Palladium Ohmic Contacts to Gallium Arsenide and its Temperature Dependence from 4.2 to 350K [R] . Jones, K. A., Linfield, E. H., Frost, J. B. 1996

机译：镍/锗/金，钯/锗/钛/铂，钛/钯欧姆接触对砷化镓的接触电阻及其温度依赖性从4.2到350K

Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium

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