Finite-element electromagnetic characterization of parasitics in multifinger thermally shunted HBTs

Dhondt F.; Barrette J.

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Finite-element electromagnetic characterization of parasitics in multifinger thermally shunted HBTs

机译：多指热并联HBT中寄生物的有限元电磁表征

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This work describes a methodology to extract parasitic capacitances and evaluate losses in multifinger thermally shunted heterojunction bipolar transistors (HBTs) using three dimensional (3-D) electromagnetic modeling. This method is based on the partitioning of the structure into zones of propagation, which simplifies the analysis of the computed scattering matrices. The approach is validated using on-wafer measurements of open-circuit test structures. This work also addresses the impact of changes in device topology on parasitic coupling capacitance and association efficiency.

机译：这项工作描述了一种使用三维（3-D）电磁建模提取寄生电容并评估多指热并联异质结双极晶体管（HBT）中的损耗的方法。此方法基于将结构划分为传播区域，从而简化了对计算的散射矩阵的分析。使用开路测试结构的晶圆上测量来验证该方法。这项工作还解决了器件拓扑变化对寄生耦合电容和关联效率的影响。

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来源
《IEEE Microwave and Guided Wave Letters》 |1998年第4期|P.167-169|共3页
作者
Dhondt F.; Barrette J.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs [J] . Ge J., Cao Y., Wu D., Electron Devices, IEEE Transactions on . 2012,第3期

机译：微波多指基于InP的DHBT电热耦合与电磁仿真的组合模型
2. An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition [J] . Nidhin K, Shubham Pande, Shon Yadav, Electron Devices, IEEE Transactions on . 2020,第11期

机译：实际运行条件下的多素SiGe HBT的高效热模型
3. Efficient Modeling of Distributed Dynamic Self-Heating and Thermal Coupling in Multifinger SiGe HBTs [J] . Suresh Balanethiram, Rosario D’Esposito, Anjan Chakravorty, IEEE Transactions on Electron Devices . 2016,第9期

机译：多指SiGe HBT中分布式动态自热和热耦合的高效建模
4. A study on transient intra-device thermal coupling in multifinger SiGe HBTs (Student) [C] . DEsposito R., Weis M., Sahoo A.K., IEEE Bipolar/BiCMOS circuits and technology meeting . 2014

机译：多指SiGe HBT中瞬态器件内热耦合的研究（学生）
5. Power-Derived Thermal Characterization of SiGe HBTs and Design of Timing Circuit using a Phase Locked-Loop. [D] . Shah, Valay Dineshbhai. 2016

机译：SiGe HBT的功率衍生热表征和使用锁相环的定时电路设计。
6. Topology optimization for three-dimensional electromagnetic waves using an edge element-based finite-element method [O] . Yongbo Deng, Jan G. Korvink -1

机译：基于边缘元素的有限元方法对三维电磁波进行拓扑优化
7. An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition [O] . Nidhin K, Shubham Pande, Shon Yadav, 2020

机译：实际运行条件下的多素SiGe HBT的高效热模型
8. Device Physics Analysis of Parasitic Conduction Band Barrier Formation in SiGe HBTs [R] . Roenker, K. P., Alterovitz, S. A. 2000

机译：siGe HBT中寄生导带屏障形成的器件物理分析

Finite-element electromagnetic characterization of parasitics in multifinger thermally shunted HBTs

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