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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Residual stress in sputtered gold films on quartz measured by the cantilever beam deflection technique
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Residual stress in sputtered gold films on quartz measured by the cantilever beam deflection technique

机译：悬臂梁偏转技术测量石英上溅射金膜的残余应力

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With resonator applications in mind, the residual stress in sputtered gold electrodes on quartz has been investigated with respect to various deposition rates (2, 10, and 50 /spl Aring//s), pressures (1.0 and 3.0 10/sup -3/ mbar), deposition temperatures (80/spl deg/C and room temperature (RT)), film thicknesses (approx. 400 to 800 /spl Aring/), and substrate smoothnesses (lapped and polished), using the cantilever beam deflection method. Samples were monitored for 4 weeks at room temperature followed by 13 weeks of annealing at 85/spl deg/C. The initial stress (ranging from -180 to -60 MPa) was compressive for all samples but turned tensile (a few megaPascals) in some of the samples after annealing. A significant decrease in initial compressive stress appeared with samples coated at an elevated temperature. From samples prepared at lower pressure and differing only in film thickness and substrate roughness, an increased compressive stress was found in thicker films and on rougher surfaces. The stress relaxation has been fitted to an exponential expression, and an attempt to relate the stress to a frequency shift (typically a few parts per million for ordinary, 100-/spl mu/m thick AT blanks) has been made. With the help of transmission electron microscopy (TEM) the film morphology was investigated and related to the deposition parameters and aging. Judging from the increase in compressive stress and grain refinement with increased deposition rate and decreased pressure, the atomic peening mechanism is the most likely reason for the induced stress. Rutherford backscattering spectrometry (RBS) was employed to rule out the inclusion of argon (below or around 0.5%) as an explanation. From the vague, but clearly discernible, trend toward faster RT stress relaxation with higher initial stress, together with the finer film morphology, the relief mechanism is believed to be stress-promoted grain boundary diffusion.
机译：考虑到谐振器的应用，已针对各种沉积速率（2、10和50 / spl Aring // s），压力（1.0和3.0 10 / sup -3 /毫巴），沉积温度（80 / spl deg / C和室温（RT）），膜厚度（约400至800 / spl Aring /）和基板光滑度（研磨和抛光），采用悬臂梁偏转法。在室温下监测样品4周，然后在85 / spl deg / C下退火13周。初始应力（范围从-180到-60 MPa）对于所有样品都是压缩性的，但是在退火后某些样品中的初始应力变为张性（几兆帕）。样品在高温下涂覆时，初始压缩应力显着降低。从在较低压力下制备且仅在膜厚度和基底粗糙度上不同的样品中，发现在较厚的膜和较粗糙的表面上压缩应力增加。应力松弛已拟合为指数表达式，并已尝试将应力与频率偏移（对于100- / splμ/ m厚的普通AT坯料，通常为百万分之几）相关联。借助于透射电子显微镜（TEM），研究了膜的形态并与沉积参数和老化有关。从压缩应力的增加以及沉积速率增加和压力降低引起的晶粒细化来看，原子喷丸机制是诱发应力的最可能原因。使用卢瑟福背散射光谱法（RBS）排除了氩气的含量（低于或低于0.5％）作为解释。从模糊的，但清晰可辨的趋势来看，具有较高的初始应力的RT应力松弛速度更快，并且膜的形态更精细，其缓解机制被认为是应力促进的晶界扩散。

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