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首页> 外文期刊>Japanese journal of applied physics >Bulk photovoltaic effect in a BiFeO_3 thin film on a SrTiO_3 substrate
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Bulk photovoltaic effect in a BiFeO_3 thin film on a SrTiO_3 substrate

机译：在SrTiO_3衬底上的BiFeO_3薄膜中的体光伏效应

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摘要

Epitaxial BiFeO_3 (BFO) thin films with striped- and single-domain structures have been grown on SrTiO_3 (STO) (103) and (113) substrates by radio-frequency planar magnetron sputtering. The domain structure of BFO was controlled by the orientation of the STO substrate. Piezoelectric force microscopy revealed that BFO thin films on STO (103) and STO (113) had a striped-domain structure with 71° domain walls running along (010)_(STO), and a single-domain structure, respectively. To confirm the photovoltaic property, rectangular Pt electrodes with widths of 150-200 μm were deposited on BFO surfaces with interelectrodes distances of 200-250 μm. I-V characteristics were measured under an illumination of a collimated violet laser (λ = 405 nm) with a power density of 380 W/cm~2. In the striped-domain-structure BFO film with Pt electrodes fabricated along domain walls, above-band-gap open-circuit voltage (V_(OC)) of 29 V was observed. In addition, single-domain-structured BFO thin film with Pt electrodes fabricated along (110) also showed above-band-gap V_(oc) of 26 V despite the absence of domain walls. It is considered that these large V_(oc) values originated from the photovoltaic effect not at the domain walls but in bulk BFO.
机译：具有条纹和单畴结构的外延BiFeO_3（BFO）薄膜已通过射频平面磁控溅射在SrTiO_3（STO）（103）和（113）衬底上生长。 BFO的域结构由STO衬底的方向控制。压电显微镜显示，STO（103）和STO（113）上的BFO薄膜具有71°畴壁沿（010）_（STO）延伸的条状畴结构和单畴结构。为了确认光伏性能，将宽度为150-200μm的矩形Pt电极沉积在电极间距离为200-250μm的BFO表面上。 I-V特性是在功率密度为380 W / cm〜2的准直紫激光（λ= 405 nm）的照射下测量的。在沿着畴壁制造的具有Pt电极的条状畴结构BFO膜中，观察到29V的带隙以上开路电压（V_（OC））。另外，尽管没有畴壁，但具有沿（110）制造的Pt电极的单畴结构的BFO薄膜也显示出26V的带隙以上V_（oc）。认为这些大的V_（oc）值不是在畴壁处而是在整体BFO中源自光伏效应。

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  • 来源
    《Japanese journal of applied physics》 |2014年第9s期|09PA16.1-09PA16.4|共4页
  • 作者

    Seiji Nakashima; Tomohisa Uchida; Daichi Nakayama; Hironori Fujisawa; Masafumi Kobune; Masaru Shimizu;

  • 作者单位

    Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan;

    Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan;

    Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan;

    Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan;

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan;

    Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan;

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