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首页> 外文期刊>Japanese journal of applied physics >Optical and Electrical Properties of Nitrogen-Doped Diamond-Like Carbon Films Prepared by a Bipolar-Type Plasma-Based Ion Implantation
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Optical and Electrical Properties of Nitrogen-Doped Diamond-Like Carbon Films Prepared by a Bipolar-Type Plasma-Based Ion Implantation

机译：双极型等离子体基离子注入制备的氮掺杂类金刚石碳膜的光学和电学性质

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摘要

Diamond-like carbon (DLC) films are prepared by a bipolar-type plasma-based ion implantation (PBII) technique using toluene and nitrogen gases (N_2), and the optical and electrical properties are examined as a function of N_2 flow rate. The N concentration in the films and structural changes are also examined by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), and Raman spectroscopy. It is found that the deposition rate decreases, but N concentration linearly increases with increasing N_2 flow rate. Granular surfaces are observed and the grains decreases in size as N_2 flow rate increases. In addition, Raman analysis suggests that aromatic ring clusters and the amorphous structure increase in amount. The optical band gap and conductivity increase with increasing N concentration up to about 11 at. %, and then decrease with further increase in N concentration.
机译：类金刚石碳（DLC）膜是通过使用甲苯和氮气（N_2）的双极型基于等离子体的离子注入（PBII）技术制备的，其光学和电学性质随N_2流量的变化而变化。膜中的氮浓度和结构变化也通过卢瑟福背散射光谱法（RBS），原子力显微镜（AFM）和拉曼光谱法进行了检查。发现沉积速率降低，但是N浓度随着N_2流速的增加而线性增加。观察到颗粒表面，并且随着N_2流速增加，晶粒尺寸减小。另外，拉曼分析表明芳环簇和非晶结构的量增加。随N浓度的增加，光学带隙和电导率增加，直至约11 at。 ％，然后随着氮浓度的进一步增加而降低。

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  • 来源
    《Japanese journal of applied physics》 |2012年第1issue2期|p.01AC04.1-01AC04.7|共7页
  • 作者

    Setsuo Nakao; Tetsuo Soga; Tsutomu Sonoda; Tokuhiro Asada; Naoki Kishi;

  • 作者单位

    Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST),Nagoya 463-8560, Japan;

    Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;

    Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST),Nagoya 463-8560, Japan;

    Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;

    Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;

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