Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

Harumasa YOSHIDA; Yasufumi TAKAGI; Masakazu KUWABARA; Hiroshi AMANO; Hirofumi KAN

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Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

机译：完全无裂纹的2英寸生长的GaN / AlGaN紫外激光二极管。蓝宝石基板

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摘要

We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. The UV laser diodes lased in the peak wavelength range from 355.4 to 361.6 nm under a pulsed current operation at room temperature. We have also investigated both parameters, material gain and optical-internal loss in GaN/AlGaN multiple quantum wells (MQWs). The actual threshold currents of the UV laser diodes were practically in agreement with the estimated threshold current from these parameters. This layer structure is one of the solutions for the purpose of high-yield production of UV photonic devices.

机译：我们已经成功地制造了紫外线（UV）GaN / AlGaN激光二极管，整个2英寸制程中均未产生裂纹。蓝宝石衬底使用异面控制外延横向过度生长（hetero-FACELO）方法。在室温下以脉冲电流操作的峰值波长范围为355.4至361.6 nm的紫外激光二极管。我们还研究了GaN / AlGaN多量子阱（MQW）中的参数，材料增益和光学内部损耗。 UV激光二极管的实际阈值电流实际上与根据这些参数估算的阈值电流一致。这种层结构是用于高产量生产UV光子器件的解决方案之一。

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来源
《Japanese journal of applied physics》 |2007年第9a期|5782-5784|共3页
作者
Harumasa YOSHIDA; Yasufumi TAKAGI; Masakazu KUWABARA; Hiroshi AMANO; Hirofumi KAN;
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作者单位

Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
ultraviolet (UV); laser diode; GaN, AlGaN; hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO);

机译：紫外线（UV）;二极管激光器GaN;AlGaN;异面控制的外延横向过度生长（hetero-FACELO）;

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1. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate [J] . Xiao-Hang Li, Tsung-Ting Kao, Mahbub Satter, Applied Physics Letters . 2015,第4期

机译：演示了蓝宝石衬底上生长的AlGaN多量子阱激光器的横向磁深紫外激发发射
2. Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates [J] . Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchprohm, Applied physics express . 2015,第12期

机译：在独立式GaN和蓝宝石衬底上生长的AlGaN p-i-n紫外雪崩光电二极管的比较
3. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency [J] . Peng Dong, Jianchang Yan, Yun Zhang, Journal of Crystal Growth . 2014,第juna1期

机译：在纳米图案蓝宝石衬底上生长的基于AlGaN的深紫外发光二极管具有显着改善的内部量子效率
4. Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sapphire substrates [C] . W. H. Sun, E. Kuokstis, M. Gaevski, International conference on nitride semiconductors . 2003

机译：来自非极性AlGaN / GaN量子孔的强紫外线在R面蓝宝石基材上生长
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [O] . Jie Zhao, Hongpo Hu, Yu Lei, 2019

机译：蓝宝石衬底上具有纳米尺度厚AlN成核层的高质量无裂纹AlN薄膜的异质外延生长用于基于AlGaN的深紫外发光二极管
7. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [O] . 2019

机译：具有纳米级厚的Aln成核层对基于Algan的深紫外发光二极管的纳米级厚的Aln成核膜的高质量和无裂缝Aln膜的异质生长
8. AlGaN Ultraviolet Photoconductors Grown on Sapphire [R] . Walker, D., Zhang, X., Kung, P., 1996

机译：蓝宝石上生长的alGaN紫外光电导体

Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

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