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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Growth of Transparent Conductive Al-Doped ZnO Thin Films and Device Applications
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Growth of Transparent Conductive Al-Doped ZnO Thin Films and Device Applications

机译:透明导电掺铝ZnO薄膜的生长及其器件应用

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High-purity transparent conductive Al-doped ZnO (AZO) films were grown by KrF excimer pulsed laser deposition. We used ultraviolet and X-ray photoelectron spectroscopes to directly measure the absolute values of the vacuum work function of AZO films. The structure and electrical and optical properties of the as-grown AZO films were studied using X-ray diffraction, room temperature Hall effect measurement and spectro photometer, respectively. Finally, organic light emitting diodes (OLED) were fabricated on these AZO films. OLED device measurement showed that the current of the OLED with AZO was clearly increased. Our AZO thin films showed a higher conductivity (ρ = 1.33 x 10~(-4) Ωcm, R_s = 10.1 Ω/sq) than conventional indium tin oxide films.
机译:高纯透明导电掺杂铝的ZnO(AZO)薄膜通过KrF受激准分子脉冲激光沉积法生长。我们使用紫外线和X射线光电子能谱仪直接测量AZO膜的真空功函数的绝对值。使用X射线衍射,室温霍尔效应测量和分光光度计分别研究了成膜的AZO薄膜的结构,电学和光学性质。最后,在这些AZO膜上制造了有机发光二极管(OLED)。 OLED器件的测量表明,带有AZO的OLED的电流明显增加。我们的AZO薄膜显示出比常规铟锡氧化物薄膜更高的电导率(ρ= 1.33 x 10〜(-4)Ωcm,R_s = 10.1Ω/ sq)。

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