Effect Of Mechanical Strain On 1/f Noise In Metal-oxide Semiconductor Field-effect Transistors

Ji-Song Lim; Antonio Acosta; Scott E. Thompson; Gijs Bosman; Eddy Simoen; Toshikazu Nishida

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Effect Of Mechanical Strain On 1/f Noise In Metal-oxide Semiconductor Field-effect Transistors

机译：机械应变对金属氧化物半导体场效应晶体管1 / f噪声的影响

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The drain current 1/f noise power spectral density (PSD) is measured on industrial long channel metal-oxide-semiconductor field-effect transistors (MOSFETs) under externally applied mechanical stress. It is observed that 1/f noise PSD increases for both n-channel MOSFETs under uniaxial tensile stress and p-channel MOSFETs under uniaxial compressive stress. The strain-induced noise PSD change is also frequency dependent with larger changes at lower frequencies. The change in noise PSD magnitude is shown to be primarily due to mechanical strain-induced mobility change while the change in noise index α in the 1/f~α spectrum is attributed to strain-induced energy level shift in the inversion layer and/or trap redistribution in energy and space.

机译：漏极电流1 / f噪声功率谱密度（PSD）是在外部施加机械应力的条件下在工业长沟道金属氧化物半导体场效应晶体管（MOSFET）上测量的。可以观察到，在单轴拉伸应力下的n沟道MOSFET和在单轴压缩应力下的p沟道MOSFET的1 / f噪声PSD都会增加。应变引起的噪声PSD变化也与频率相关，在较低频率下变化较大。噪声PSD幅值的变化主要归因于机械应变引起的迁移率变化，而1 / f〜α频谱中噪声指数α的变化归因于应变引起的反演层能级移动和/或捕获能量和空间中的重新分布。

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来源
《Journal of Applied Physics》 |2009年第5期|608-618|共11页
作者
Ji-Song Lim; Antonio Acosta; Scott E. Thompson; Gijs Bosman; Eddy Simoen; Toshikazu Nishida;
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作者单位

Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Effect Of Mechanical Strain On 1/f Noise In Metal-oxide Semiconductor Field-effect Transistors

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