Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

H. L. Wang; D. Ning; H. J. Zhu; F. Chen; H. Wang; X. D. Wang; S. L. Feng

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Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

机译：InAs / GaAs自组装量子点的深层瞬态光谱学电子特性

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A deep level transient spectroscopy technique has been used to determine the emission activation energies and capture barriers for electrons and holes in InAs self-assembled quantum dots embedded in GaAs. The ground electron and hole energies relative to their respective energy band edges of GaAs are 0.13 and 0.09 eV. Measurements show that the capture cross section of quantum dots is thermally activated. The capture barrier of quantum dots for electrons and holes are 0.30 and 0.26 eV, respectively. The results fit well with the results of photoluminescence spectroscopy measurements.

机译：深层瞬态光谱技术已被用于确定嵌入GaAs中的InAs自组装量子点中电子和空穴的发射活化能和俘获势垒。相对于GaAs的各自能带边缘的地电子和空穴能为0.13和0.09 eV。测量表明，量子点的捕获截面被热激活。电子和空穴的量子点的捕获势垒分别为0.30和0.26 eV。该结果与光致发光光谱测量的结果非常吻合。

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来源
《Journal of Crystal Growth》 |2000年第4期|p.107-112|共6页
作者
H. L. Wang; D. Ning; H. J. Zhu; F. Chen; H. Wang; X. D. Wang; S. L. Feng;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
self-assembled quantum dots; InAs/GaAs; DLTS; PL; activation energy; capture barrier;

机译：自组装量子点;InAs / GaAs;DLTS;PL;活化能;俘获势垒;

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1. Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C–V and deep level transient spectroscopy [J] . Jin Soak Kim, Eun Kyu Kim, Jun Oh Kim, Physica status solidi, B. Basic research . 2009,第4期

机译：利用CV和深能级瞬态光谱分析InAs / GaAs自组装量子点的能级
2. Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy [J] . Li SW., Koike K., Yano M., Physica, B. Condensed Matter . 2003,第1a4期

机译：深能级瞬态光谱法垂直堆叠InAs自组装量子点的电子结构
3. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices [J] . Asano Tetsuya, Fang Zhaoqiang, Madhukar Anupam Journal of Applied Physics . 2010,第7期

机译：GaAs（001）/ InAs / InGaAs / GaAs自组装量子点结构中的深能级及其对量子点器件的影响
4. Deep level transient spectroscopy study of energy levels in InAs/GaAs self-assembled quantum dots [C] . J. S. Kim, Y.-I. Lee, L. Ha, International Conference on the Physics of Semiconductors . 2009

机译：INAS / GAAS自组装量子点中的能级的深度瞬态瞬态光谱研究
5. Self-Assembled InAs/GaAs/ Quantum Dot Solar Cells. [D] . Li, Tian. 2015

机译：自组装的InAs / GaAs /量子点太阳能电池。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较
8. Space-Charge Spectroscopy of Self-Assembled Quantum Dots InAs in GaAs. [R] . Bazlov, N. V., Vyvenko, O. F., Trofimov, O. A., 1998

机译：Gaas中自组装量子点Inas的空间电荷光谱。

Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

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