...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica status solidi, B. Basic research >Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C–V and deep level transient spectroscopy
【24h】

Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C–V and deep level transient spectroscopy

机译：利用CV和深能级瞬态光谱分析InAs / GaAs自组装量子点的能级

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Energy levels of InAs/GaAs self-assembled quantum dot(QD) system were analyzed by capacitance—voltage (C— V)and deep level transient spectroscopy (DLTS) methods. TheQD signals were partially separated by DLTS measurementwith small bias changing_ The activation energies of QD sig-nals were varied from 66 meV to 610 meV by changing of 0.6 V applied bias, which energies are reliteil to the confined energy levels of InAs QDs. Then,the ground states of InAS QDs were considered to be located at 0.61 eVbelow the conduction band edge of GaAs barriei,In aAilition,it showed that DLTS signal of QDs are largely attieted by their density of energy state.
机译：通过电容-电压（C-V）和深能级瞬态光谱法（DLTS）方法分析了InAs / GaAs自组装量子点（QD）系统的能级。 QD信号通过DLTS测量在偏置变化很小的情况下被部分分离。通过改变0.6 V施加的偏置，QD信号的激活能量从66 meV变为610 meV，这些能量被重新调整为InAs QD的受限能级。然后，认为InAS量子点的基态位于GaAs Barriei的导带边缘以下0.61 eV处。在变化中，表明量子点的DLTS信号在很大程度上取决于其能量态密度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号