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Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches

机译：窄氧化物沟槽之间外延锗层生长过程中的应变演化

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摘要

We have grown the high quality and compressively strained Ge epilayers on a Si substrate with 40-nm width SiO_2 trench patterns at a growth temperature of 600℃ Based on (224) reciprocal space mapping measurements of Ge samples with a different thickness, the residual in-plane strain value along the trench direction decreased from -0.74% to -0.42% with increasing thickness of the Ge layer from 150 nm to 180 nm. In addition, the compressive strain along the trench direction (ε_(1-bar10))) was larger than that in the direction perpendicular to the trench (ε_(110)) regardless of the thickness. For example, when Ge was overgrown on a SiO_2 trench, the ε_(1-bar10)) and ε_(110) values were -0.42% and ～0%, respectively. We conclude that the asymmetric strain relaxation behavior of Ge is related to the SiO_2 trench patterns, which prevent the dislocations from gliding. Defects such as a microtwin and/or stacking fault were generated during the coalescence of Ge films having different lattice constants in each Ge layer arising from the different relaxation values. A local strain in Ge, with a high spatial resolution of 2.5 nm, was measured along the two directions by means of a nanobeam electron diffraction method, thus confirming asymmetric strain relaxation and the results are in good agreement with reciprocal space mapping results.
机译：我们在（600）生长温度为600℃，宽度为40 nm的SiO_2沟槽图案的Si衬底上生长了高质量且受压应变的Ge外延层。根据不同厚度的Ge样品的（224）互空间映射测量，残留的随着Ge层的厚度从150nm增加到180nm，沿沟槽方向的平面应变值从-0.74％减小到-0.42％。另外，与厚度无关，沿着沟槽方向（ε_（1-bar10））的压缩应变大于垂直于沟槽（ε_（110））的方向的压缩应变。例如，当Ge在SiO_2沟槽上过度生长时，ε_（1-bar10））和ε_（110）值分别为-0.42％和〜0％。我们得出的结论是，Ge的不对称应变弛豫行为与SiO_2沟槽图案有关，从而阻止了位错滑动。在Ge膜的聚结期间，由于不同的弛豫值而在每个Ge层中具有不同的晶格常数，从而产生诸如微孪晶和/或堆叠缺陷的缺陷。利用纳米束电子衍射法在两个方向上测量了Ge的局部应变，具有2.5nm的高空间分辨率，从而证实了不对称应变弛豫，并且该结果与相互空间映射结果良好吻合。

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  • 来源
    《Journal of Crystal Growth》 |2014年第1期|308-313|共6页
  • 作者

    Byongju Kim; Sun-Wook Kim; Hyunchul Jang; Jeong-Hoon Kim; Sangmo Koo; Dae-Hyun Kim; Byoung-Gi Min; Se-Jeong Park; Jason S. Song; Dae-Hong Ko;

  • 作者单位

    Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;

    SEMATECH, 257 Fuller Road, Albany, NY 12203, United States;

    SEMATECH, 257 Fuller Road, Albany, NY 12203, United States;

    Korea ITS Co., Ltd., 101 Baekjegobun-ro, Songpa-gu, Seoul 138-863, Republic of Korea;

    Voltaix Inc., 197 Meister Avenue, Branchburg, NJ 08876, United States;

    Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. High resolution x-ray diffraction; A1. Nanobeam electron diffraction; A1. Stresses; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting germanium;

    机译：A1。高分辨率X射线衍射;A1。纳米束电子衍射;A1。压力;A3。化学气相沉积工艺;A3。选择性外延;B2。半导体锗;

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