Structural and optical characterization of AlGaN/GaN layers

M. Jayasakthi; R. Ramesh; P. Arivazhagan; R. Loganathan; K. Prabakaran; M. Balaji; K. Baskar

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Structural and optical characterization of AlGaN/GaN layers

机译：AlGaN / GaN层的结构和光学表征

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High quality Al_xGa_(1-x)N layers have been grown on c-plane sapphire substrate by Metal Organic Vapor Phase Epitaxy. The aluminum (Al) composition was varied from 15% to 51%. When the flow rate of trimethyla-luminum was increased, the growth rate was found to be decreased. The crystalline quality of AlGaN layers has been evaluated using High Resolution X-ray Diffraction rocking curves. Reciprocal Space Mapping results confirmed that at low Al composition (x=0.15), AlGaN layers are found to be fully strained. At high Al composition (x=0.33, 0.51), AlGaN layers are relaxed by generation of cracks due to lattice mismatch. The optical properties of AlGaN/GaN layers have been investigated by room temperature photoluminescence. With increasing Al content, the AlGaN emission peak has been found to shift towards higher energies. The surface morphology and roughness of AlGaN have been studied by Atomic Force Microscopy. Root Mean Square roughness values have been found to increase with the increase of Al.

机译：通过金属有机气相外延在c面蓝宝石衬底上生长了高质量的Al_xGa_（1-x）N层。铝（Al）的组成从15％变化到51％。发现增加三甲基铝的流速时，生长速率降低。已使用高分辨率X射线衍射摇摆曲线评估了AlGaN层的晶体质量。相互空间映射结果证实，在低Al含量（x = 0.15）下，发现AlGaN层已完全应变。在高Al含量（x = 0.33，0.51）下，由于晶格失配而产生裂纹，从而使AlGaN层松弛。已经通过室温光致发光研究了AlGaN / GaN层的光学性质。随着铝含量的增加，已经发现AlGaN的发射峰向更高的能量转移。通过原子力显微镜研究了AlGaN的表面形貌和粗糙度。已发现均方根粗糙度值随Al的增加而增加。

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来源
《Journal of Crystal Growth》 |2014年第1期|527-531|共5页
作者
M. Jayasakthi; R. Ramesh; P. Arivazhagan; R. Loganathan; K. Prabakaran; M. Balaji; K. Baskar;
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作者单位

Crystal Growth Centre, Anna University, Chennai 600025, India;

Crystal Growth Centre, Anna University, Chennai 600025, India;

Crystal Growth Centre, Anna University, Chennai 600025, India;

Crystal Growth Centre, Anna University, Chennai 600025, India;

Crystal Growth Centre, Anna University, Chennai 600025, India;

Crystal Growth Centre, Anna University, Chennai 600025, India;

Crystal Growth Centre, Anna University, Chennai 600025, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. AFM; A1. HRXRD; A1. PL; A1. RSM; A3. MOVPE;

机译：A1。原子力显微镜A1。 ХРКСРД;A1。 PL;A1。 PCM;一世。电影;

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3. Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Heterostructures Grown on Si [J] . Chin-An CHANG, Shao-Tang LIEN, Chen-Han LIU, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4A期

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4. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates [C] . W.V. Lundin, A.S. Usikov, B.V. Pushnyi, International conference on silicon carbide, III-nitrides and related materials;ICSCIII-N'97 . 1998

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Structural and optical characterization of AlGaN/GaN layers

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