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首页> 外文期刊>Journal of Crystal Growth >VGF growth of GaAs utilizing heater-magnet module
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VGF growth of GaAs utilizing heater-magnet module

机译：利用加热磁铁模块的砷化镓的VGF生长

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The recent development of the vertical gradient freeze (VGF) growth of GaAs focuses on the increase of process efficiency, a reduction of production costs and a simultaneous improvement of the crystal quality. To meet this technological and scientific challenge, different strategies are proposed, e.g. an increase of crystal size, simultaneous crystallization in multi-crucible furnaces or an increase of growth rate. To achieve these goals, an exact and permanent control of the melt flow is of crucial importance that is easily provided by traveling magnetic fields (TMF). The key aspect of the presented study is the well-defined control of the solid/liquid interface bending during VGF GaAs growth. Therefore, global simulations of the whole furnace are inevitable. Results of numerical simulations enable to properly adjust downward-directed Lorentz forces to achieve a significant decrease of the concavity of the solid-liquid interface. Compared to a reference crystal grown without TMF, a reduction of the interface deflection by about 30% was obtained. Gained experience from experiments in a single-crucible heater-magnet module (HMM) and numerical simulations led to the design of a novel multi-crucible HMM.
机译：GaAs垂直梯度凝固（VGF）生长的最新发展集中在提高工艺效率，降低生产成本和同时提高晶体质量上。为了应对这一技术和科学挑战，提出了不同的策略，例如增加晶体尺寸，在多坩埚炉中同时结晶或增加生长速率。为了实现这些目标，精确和永久地控制熔体流动至关重要，通过行进磁场（TMF）可以轻松地对其进行控制。本研究的关键方面是在VGF GaAs生长期间对固/液界面弯曲的明确控制。因此，整个炉子的全局模拟是不可避免的。数值模拟的结果使得可以适当地调整向下的洛伦兹力，从而实现固液界面凹度的显着降低。与没有TMF的参比晶体相比，界面偏转降低了约30％。从单坩埚加热器磁铁模块（HMM）的实验中获得的经验以及数值模拟导致了新型多坩埚HMM的设计。

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