Highly strained InAs quantum wells on InP substrates for mid-IR emission

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第8期|p.1388-1390|共3页
• 作者

  Sangho Kim; Jeremy Kirch; Luke Mawst;

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• 作者单位

  Department of Electrical and Computer Engineering, University of Wisconsin at Madison, WI 53706, United States;

  rnDepartment of Electrical and Computer Engineering, University of Wisconsin at Madison, WI 53706, United States;

  rnDepartment of Electrical and Computer Engineering, University of Wisconsin at Madison, WI 53706, United States;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. High-resolution X-ray diffraction; A1. Strain; A3. Organometallic vapor phase epitaxy; B1. InAs; B1.TBA; B2. Semiconductor III-V materials;

  机译：A1。高分辨率X射线衍射;A1。应变;A3。有机金属气相外延;B1。 InAs;B1.TBA;B2。半导体III-V材料;