首页> 外文期刊>Journal of Crystal Growth >Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering
【24h】

Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering

机译:氢对射频磁控溅射沉积低温多晶硅薄膜的结构和光学性能的影响

获取原文
获取原文并翻译 | 示例
           

摘要

To improve the properties of polycrystalline Ge thin films, which are a candidate material for the bottom cells of low cost monolithic tandem solar cells, ~300 nm in situ hydrogenated Ge (Ge:H) thin films were deposited on silicon nitride coated glass by radio-frequency magnetron sputtering. The films were sputtered in a mixture of 15 sccm argon and 10 sccm hydrogen at a variety of low substrate temperatures (T_s) ≤ 450 ℃ Structural and optical properties of the Ge:H thin films were measured and compared to those of non-hydrogenated Ge thin films deduced in our previous work. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increase in T_s. It is found that the introduction of hydrogen gas benefits the structural properties of the polycrystalline Ge film, sputtered at 450 ℃, although the onset crystallization temperature is ~90℃ higher than in those sputtered without hydrogen. Compared with non-hydrogenated Ge thin films, hydrogen incorporated in the films leads to broadened band gaps of the films sputtered at different T_s.
机译:为了提高多晶Ge薄膜的性能,多晶Ge薄膜是低成本单片串联太阳能电池底部电池的候选材料,通过射频将〜300 nm的原位氢化Ge(Ge:H)薄膜沉积在氮化硅涂层玻璃上磁控溅射。在各种低衬底温度(T_s)≤450℃的条件下,在15 sccm的氩气和10 sccm的氢气的混合物中溅射薄膜;测量了Ge:H薄膜的结构和光学性质,并将其与未氢化的Ge进行了比较。我们以前的工作中推断出的薄膜。拉曼光谱和X射线衍射图谱表明,随着T_s的增加,从非晶相到晶相的结构演变。发现氢气的引入有利于在450℃溅射的多晶Ge膜的结构性能,尽管开始的结晶温度比没有氢气溅射的Ge膜高约90℃。与未氢化的Ge薄膜相比,掺入薄膜中的氢导致以不同的Ts溅射的薄膜的带隙变宽。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号