Growth Of Crack-free Algan On Selective-area-growth Gan

H. Miyake; N. Masuda; Y. Ogawahara; M. Narukawa; K. Hiramatsu; T. Ezaki; N. Kuwano

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Growth Of Crack-free Algan On Selective-area-growth Gan

机译：选择性区域生长Gan上无裂纹铝的生长

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Crack-free AlGaN with an Al content of 0.51 was successfully fabricated on selective-area-growth (SAG) GaN. To avoid the coalescence of the lateral overgrown GaN, the growth process of SAG-GaN was accurately controlled by in situ monitoring. Transmission electron microscopy (TEM) measurement demonstrated that the threading dislocations (TDs) disappeared from the SAG-GaN layer and appeared in the interface of SAG-GaN and AlGaN. Furthermore, the TDs in the AlGaN layer were mainly pure edge-type dislocations and the TD density of the AlGaN layer was about 1-3×10~8 cm~(-2).

机译：在选择性区域生长（SAG）GaN上成功制造了Al含量为0.51的无裂纹AlGaN。为了避免横向过度生长的GaN的聚结，通过原位监测精确控制了SAG-GaN的生长过程。透射电子显微镜（TEM）测量表明，SAG-GaN层中的线错位（TDs）消失，并出现在SAG-GaN和AlGaN的界面中。此外，AlGaN层中的TD主要为纯边缘型位错，AlGaN层的TD密度约为1-3×10〜8 cm〜（-2）。

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来源
《Journal of Crystal Growth》 |2008年第23期|p.4885-4887|共3页
作者
H. Miyake; N. Masuda; Y. Ogawahara; M. Narukawa; K. Hiramatsu; T. Ezaki; N. Kuwano;
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作者单位

Department of Electrical and Electronic Engineering, Mie University, 1577 Krima-machiya, Tsu 514-8507, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
a1. metal-organic vapor-phase epitaxy; a1. selective-area growth; b1. nitrides;

机译：a1。金属-有机气相外延;a1。选择区生长;b1。氮化物;

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2. Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN [J] . C. McAleese, M.J. Kappers, F.D.G. Rayment, Journal of Crystal Growth . 2004,第1a4期

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3. High-temperature AlN interlayer for crack-free AlGaN growth on GaN [J] . Qian Sun, Jianfeng Wang, Hui Wang, Journal of Applied Physics . 2008,第4期

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Growth Of Crack-free Algan On Selective-area-growth Gan

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