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首页> 外文期刊>Journal of Crystal Growth >Growth optimization during III-nitride multiwafer MOVPE using realtime curvature, reflectance and true temperature measurements
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Growth optimization during III-nitride multiwafer MOVPE using realtime curvature, reflectance and true temperature measurements

机译：使用实时曲率，反射率和真实温度测量，在III型氮化物多晶片MOVPE中进行生长优化

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摘要

We employed a newly developed wafer-selective curvature, reflectance and temperature sensor (EpiCurveTT~®) in an AIX2600HT Planetary Reactor~®. Growth of GaN on sapphire as well as AlGaN and InGaN heterostructures with different material compositions were monitored in real time. During growth of a laser-diode text structure the impact of water curvature on wavelength uniformity across the water is demonstrated. Here, the known drastic dependence of indium incorporation on growth temperature requires a uniform substrate surface temperature and therefore a flat wafer during growth of the MQW region. Wafer bowing depending on substrate properties, growth temperature and the insertion of a strain-compensating interlayer is carefully examined to optimize the growth procedure.
机译：我们在AIX2600HT Planetary Reactor〜®中采用了新开发的晶圆选择性曲率，反射率和温度传感器（EpiCurveTT〜®）。实时监测GaN在蓝宝石上的生长以及具有不同材料成分的AlGaN和InGaN异质结构。在激光二极管文本结构的生长过程中，证明了水曲率对整个水域波长均匀性的影响。在此，已知铟掺入对生长温度的强烈依赖性要求均匀的衬底表面温度，因此在MQW区域生长期间需要平坦的晶片。仔细检查晶圆弯曲程度，具体取决于基板性能，生长温度和应变补偿中间层的插入情况，以优化生长过程。

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