Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs

J. Chen; W.Z. Shen; J.B. Wang; H. Ogawa; Q.X. Guo

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Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs

机译：GaAs反应溅射生长六角InN薄膜的显微拉曼研究

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The micro-Raman mapping with a spatial resolution of micrometer has been carried out on hexagonal FnN thin films grown by reactive sputtering on GaAs (111) substrates at 100℃ under different sputtering pressures. The distributions of correlation lengths in the InN films, which have a close relation with the defect concentration and the crystal quality, have been yielded by combining a special correlation model with a Lorenz function. We have employed the statistical method to analyze the average value and standard deviation of the correlation length in all the InN samples, and find that the one under a sputtering pressure of 10 m Torr has the best quality in average, but with the highest nonuniformity. The roles of the grain size fluctuation on the thin film nonuniformity and the InN/GaAs interfaces have been clearly revealed.

机译：在100℃，不同溅射压力下，通过反应溅射在GaAs（111）衬底上生长的六角形FnN薄膜上进行了具有微米级空间分辨率的显微拉曼映射。通过将特殊的相关模型与Lorenz函数相结合，可以得出与缺陷浓度和晶体质量密切相关的InN膜中相关长度的分布。我们采用统计方法分析了所有InN样品的相关长度的平均值和标准偏差，发现在10 m Torr溅射压力下，该样品的平均质量最好，但不均匀性最高。晶粒尺寸波动对薄膜不均匀性和InN / GaAs界面的作用已清楚地揭示出来。

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来源
《Journal of Crystal Growth》 |2003年第4期|p.435-441|共7页
作者
J. Chen; W.Z. Shen; J.B. Wang; H. Ogawa; Q.X. Guo;
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作者单位

Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, PR China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Surface structure; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;

机译：A1。表面结构;B1。氮化物;B2。半导体Ⅲ-Ⅴ材料;

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Micro-Raman study of hexagonal InN thin films grown by reactive sputtering on GaAs

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