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Influence of indium addition on electromigration behavior of solder joint

机译:铟对焊点电迁移行为的影响

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摘要

The electromigration (EM) behavior of the Cu/Sn-In/Cu solder model strip was investigated under the conditions of high electrical current density (10 kA/cm2) at various temperatures. The composition of indium (In) was 0, 4, 8, and 16 in wt%. The interconnection of Sn-In solder alloys with a Cu substrate was prepared by reflow soldering at 250 °C. Microstructural analysis confirmed that primary intermetallic compound formed at the interface of the Cu/Sn-In strip was Cu6(In,Sn)5 regardless of In contents. Sn grain size became finer as In content increased. After current stressing, electrical failure was caused by the formation of voids and cracks at the cathode because of the migration of Cu atoms. Sn-16In alloy that has fine grain structure exhibits excellent EM resistance primarily due to the retardation of Cu migration.
机译:在高电流密度(10 kA / cm2)和各种温度下研究了Cu / Sn-In / Cu焊料模型带的电迁移(EM)行为。铟(In)的组成以重量%计为0、4、8和16。 Sn-In焊料合金与Cu衬底的互连是通过在250°C下进行回流焊接来制备的。显微组织分析证实,与In含量无关,在Cu / Sn-In条带界面形成的主要金属间化合物为Cu6(In,Sn)5。随着In含量的增加,Sn晶粒尺寸变细。在施加电流之后,由于铜原子的迁移,在阴极处形成空隙和裂纹而导致电气故障。具有细晶粒结构的Sn-16In合金主要由于Cu迁移的延迟而表现出优异的EM抗性。

著录项

  • 来源
    《Journal of Materials Research》 |2011年第20期|p.2624-2631|共8页
  • 作者单位

    Graduate School of Engineering, Osaka University, Osaka 567-0047, Japan;

    Fusion Technology Lab., Hoseo University, Asan 336-795, Korea;

    Institute of Science and Industrial Research, Osaka University, Osaka 567-0047, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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