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首页> 外文期刊>Journal of materials science >Influence of the substrate temperature on the optical and electrical properties of Ga-doped ZnO thin films fabricated by pulsed laser deposition
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Influence of the substrate temperature on the optical and electrical properties of Ga-doped ZnO thin films fabricated by pulsed laser deposition

机译：衬底温度对脉冲激光沉积Ga掺杂ZnO薄膜光学和电学性质的影响

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摘要

Ga-doped (5 wt%) zinc oxide (GZO) thin films were fabricated on corning 1737 substrates at a fixed oxygen pressure of 200 mTorr at various substrate temperatures (100-300 ℃) by using pulsed laser deposition (PLD) in order to investigate the microstructure, optical, and electrical properties of the GZO thin films. It was observed that all the thin films exhibit c-axis orientation and exhibit only a (002) diffraction peak. The GZO thin film, which was fabricated at 200 mTorr and 300 ℃, showed the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak was 0.38°. The position of the XRD peak shifted to a higher angle with increase in the substrate temperature. The optical transmittance in the visible region was greater than 85%. The Burstein-Moss effect, which causes a shift toward a high photon energy level, was observed. The electrical property indicated that the highest carrier concentration (2.33 × 10~(21) cm~(-3)) and the lowest resistivity (3.72 × 10~(-4) Ωcm) were obtained in the GZO thin film fabricated at 200 mTorr and 300 ℃.
机译：利用脉冲激光沉积（PLD），在200 mTorr的固定氧气压力下，在康宁1737基板上以200 mTorr的固定氧气压力，制作了掺Ga（5 wt％）的氧化锌（GZO）薄膜，以便研究GZO薄膜的微观结构，光学和电学性质。观察到所有薄膜都表现出c轴取向并且仅表现出（002）衍射峰。在200 mTorr和300℃下制备的GZO薄膜显示出最高的（002）取向，（002）衍射峰的半峰全宽（FWHM）为0.38°。随着基板温度的升高，XRD峰的位置移至更高的角度。可见光区域的透光率大于85％。观察到了Burstein-Moss效应，该效应引起向高光子能级的转变。电学性能表明在200 mTorr的GZO薄膜中获得了最高的载流子浓度（2.33×10〜（21）cm〜（-3））和最低的电阻率（3.72×10〜（-4）Ωcm）。和300℃。

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  • 来源
    《Journal of materials science》 |2009年第8期|704-708|共5页
  • 作者

    Hyun Ho Shin; Yang Hee Joung; Seong Jun Kang;

  • 作者单位

    The Research and Development Division, Alti-electronics Co., Ltd, Yongin 449-882, South Korea;

    Department of Electrical & Semiconductor Engineering, Chonnam National University, Yosu 550-749, South Korea;

    Department of Electrical & Semiconductor Engineering, Chonnam National University, Yosu 550-749, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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