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首页> 外文期刊>Journal of nano research >Modified ITAT Model for Data Retention in Nanocrystals Based Flash Memory Gate Stack
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Modified ITAT Model for Data Retention in Nanocrystals Based Flash Memory Gate Stack

机译：改进的ITAT模型，用于基于纳米晶体的闪存门堆栈中的数据保留

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摘要

This work applies combination of Direct Tunneling model and BSIM4 based ITAT model to explain the leakage of electrons from charged nanocrystals to p-type silicon substrate in data retention condition, for an ultra-thin tunnel oxide, low voltage programmable silicon nanocrystal based flash gate stack. Basic expressions of these models are modified to incorporate the nanocrystals related charge leakage in idle mode. The concept is supported by simulating these models and comparing them with the experimental data. Transition of electrons is considered as a result of Direct Tunneling and their trapping de-trapping via water related hydrogen traps. However, it is found that modified ITAT mechanism is the dominant one. Flat-band voltage shift profile fits accurately with the model with an extrapolated 10 years device lifetime without memory closure. 3 nm thick tunnel oxide and 100 nm sized nanocrystal fabrication with Electron Beam Lithography are main features of the devices.
机译：这项工作将直接隧穿模型和基于BSIM4的ITAT模型结合使用，以解释在数据保留条件下电子从带电纳米晶体到p型硅衬底的泄漏，这是基于超薄隧道氧化物，低压可编程硅纳米晶体的闪速栅堆叠。修改了这些模型的基本表达式，以纳入空闲模式下与纳米晶体相关的电荷泄漏。通过模拟这些模型并将其与实验数据进行比较来支持该概念。电子的跃迁被认为是直接隧穿及其通过与水有关的氢阱的俘获去俘获的结果。但是，发现修改后的ITAT机制是主要机制。平坦带电压偏移曲线可精确地与该模型相匹配，具有10年的设备使用寿命，无需关闭存储器。该器件的主要特点是3纳米厚的隧道氧化物和100纳米大小的电子束光刻技术。

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