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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Modeling of radial uniformity at a wafer interface in a 2f-CCP for SiO_2 etching
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Modeling of radial uniformity at a wafer interface in a 2f-CCP for SiO_2 etching

机译：用于SiO_2蚀刻的2f-CCP中晶圆界面处的径向均匀性建模

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Two-frequency capacitively coupled plasmas (2f-CCP) are commonly used as a powerful tool for etching of metallic and dielectric materials. Functional separation between two sources, by which independent control of high-density plasma production and high-energy ion injection onto a wafer surface can be realized, will be strongly required for a precise control of the plasma etcher. When increasing the size of the wafer and aiming at high productivity, radial uniformity in the characteristics of SiO_2 etching will become a more essential issue to be addressed. The predicted radial uniformity at the wafer interface and the functional separation have been examined numerically by using VicAddress [in Advances in Low Temperature RF plasmas, edited by T. Makabe (Elsevier, Amsterdam, 2002)] in a 2f-CCP etcher in CF_4(5%)/Ar at 50 mTorr. This etcher was driven at very high frequency (100 MHz) for the production of high-density plasma and at low frequency (1 MHz) for the bias source. The plasma structure and ion velocity distribution at a wafer interface, which have a direct influence on the property of etching, are mainly discussed. Close to the wafer edge, the distortion of the potential intrinsic to the etcher has a greater effect on the ion angular distribution rather than on the ion energy distribution, resulting in a reduction of the radial uniformity of etching.
机译：两频电容耦合等离子体（2f-CCP）通常用作蚀刻金属和介电材料的有力工具。为了精确控制等离子体刻蚀机，强烈需要两个源之间的功能分离，通过该功能分离，可以实现对高密度等离子体产生和向晶片表面的高能离子注入的独立控制。当增加晶片的尺寸并着眼于高生产率时，SiO 2刻蚀特性中的径向均匀性将成为更重要的问题。晶圆界面上的径向均匀性和功能分离的预测值已通过在CF_4的2f-CCP蚀刻机中使用VicAddress [在低温RF等离子体的进展中，由T. Makabe（Elsevier，Amsterdam，2002）编辑]进行了数值检验。 5％）/ Ar在50毫托时。该刻蚀机以很高的频率（100 MHz）驱动以产生高密度等离子体，并以低频（1 MHz）驱动偏压源。主要讨论了直接影响刻蚀性能的晶片界面处的等离子体结构和离子速度分布。靠近晶片边缘，蚀刻剂固有的电势畸变对离子角度分布的影响更大，而不是对离子能量分布的影响更大，从而导致蚀刻的径向均匀性降低。

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