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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >In situ chemical sensing in AlGa/V/GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control
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In situ chemical sensing in AlGa/V/GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

机译：AlGa / V / GaN金属有机化学气相沉积工艺中的原位化学传感，可进行精确的膜厚计量和实时高级工艺控制

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In situ mass spectrometry is implemented in AlGaN/GaN/AlN metalorganic chemical vapor deposition processes on SiC substrates as a real-time process- and wafer-state metrology tool. Dynamic chemical sensing through the process cycle, carried out downstream from the wafer, revealed generation of methane and ethane reaction by-products as well as other residual gas species. The methane and ethane by-products are believed to reflect the two parallel chemical reaction pathways leading to GaN-based materials growth, namely the gas phase adduct formation route and the direct surface decomposition of the metalorganic precursor, respectively. Having detected both types of by-products as evidence for the presence of both paths, we monitored and integrated the methane and ethane signals to derive a real-time film thickness metric. Integrating the sum of the two by-product signals in this manner through the AlGaN growth period (～ 1 min or less) enabled us to predict the AlGaN cap layer thickness (～20 nm) to within ～1% or ～0.2 nm precision. This was verified by postprocess x-ray reflectance measurement, which produced a thickness map over the 2 in. wafer and yielded an average thickness for the AlGaN cap layer for comparison to the real-time mass spectrometry. These results demonstrate an opportunity for advanced process control based on real-time in situ chemical sensing, with the promise of major benefit in reproducibility and cost reduction in AlGaN/GaN-based semiconductor manufacturing.
机译：原位质谱是在SiC衬底上的AlGaN / GaN / AlN金属有机化学气相沉积工艺中实现的，是一种实时的工艺和晶圆状态计量工具。在晶圆下游进行的整个过程循环中的动态化学感应显示，甲烷和乙烷反应副产物以及其他残留气体物种的产生。据信甲烷和乙烷副产物反映了导致GaN基材料生长的两个平行化学反应路径，分别是气相加合物形成途径和金属有机前体的直接表面分解。在检测到两种副产物作为两条路径均存在的证据后，我们监测并整合了甲烷和乙烷信号，以得出实时的膜厚度量。在AlGaN的生长周期（约1分钟或更短）内，以这种方式积分两个副产物信号的总和，使我们能够预测AlGaN盖层厚度（约20 nm）的精度在约1％或约0.2 nm之内。这通过后处理X射线反射率测量得到了验证，该X射线反射率测量产生了2英寸晶圆上的厚度图，并得出了AlGaN盖层的平均厚度，以便与实时质谱法进行比较。这些结果证明了基于实时原位化学感测的先进工艺控制的机会，并有望在基于AlGaN / GaN的半导体制造中提高可重复性和降低成本方面带来重大益处。

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