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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Improved nucleation of TiN atomic layer deposition films on SiLK low-κ polymer dielectric using an Al_2O_3 atomic layer deposition adhesion layer
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Improved nucleation of TiN atomic layer deposition films on SiLK low-κ polymer dielectric using an Al_2O_3 atomic layer deposition adhesion layer

机译：使用Al_2O_3原子层沉积粘附层改善SiLK低介电常数聚合物介电层上TiN原子层沉积膜的成核作用

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摘要

Diffusion barriers are required to prevent copper from diffusing into low-κ polymer dielectrics in backend interconnects. The ability to deposit conformal diffusion barriers onto high aspect ratio, low-κ polymer features requires atomic layer deposition (ALD) techniques. This study examined TiN ALD on SiLK (a trademark of the Dow Chemical Company) low-κ polymer dielectric using tetrakis-dimethylamino titanium and NH_3. X-ray fluorescence spectroscopy (XRFS), optical microscopy, and surface profiling of the TiN ALD films deposited on SiLK revealed discontinuous films displaying distinct patchy regions. The patches corresponded to a thinner TiN coating and were attributed to difficulties for TiN ALD nucleation on SiLK. To study TiN ALD nucleation, in situ quartz-crystal microbalance (QCM) measurements were performed by spincoating SiLK onto the QCM sensor. Subsequent QCM measurements during TiN ALD revealed very low initial TiN ALD growth rates indicating poor nucleation. Al_2O_3 ALD was then performed on the SiLK film using trimethyl aluminum and H_2O. Surface profiling, XRFS, QCM, and transmission electron microscopy measurements revealed that the Al_2O_3 ALD film nucleates immediately on SiLK producing a continuous Al_2O_3 film. In addition, QCM measurements showed that TiN ALD nucleates readily on the Al_2O_3 surface. The Al_2O_3 ALD adhesion layer facilitated the growth of a continuous TiN ALD film on SiLK. Examination of TiN ALD films prepared on SiLK with progressively thinner Al_2O_3 ALD adhesion layers revealed that 10 Al_2O_3 ALD cycles were sufficient to promote the nucleation of the TiN ALD film.
机译：需要扩散阻挡层以防止铜扩散到后端互连中的低κ聚合物介电层中。将共形扩散势垒沉积到高纵横比，低κ聚合物特征上的能力需要原子层沉积（ALD）技术。这项研究使用四-二甲基氨基钛和NH_3检验了SiLK（陶氏化学公司的商标）低κ聚合物电介质上的TiN ALD。 X射线荧光光谱（XRFS），光学显微镜和沉积在SiLK上的TiN ALD膜的表面分析表明，不连续的膜显示出明显的斑点区域。该补丁对应于更薄的TiN涂层，并归因于TiN ALD在SiLK上成核的困难。为了研究TiN ALD成核作用，通过将SiLK旋涂到QCM传感器上进行了原位石英晶体微天平（QCM）测量。 TiN ALD期间的后续QCM测量显示，初始TiN ALD的生长速率非常低，表明成核不良。然后使用三甲基铝和H_2O在SiLK膜上进行Al_2O_3 ALD。表面轮廓分析，XRFS，QCM和透射电子显微镜测量表明，Al_2O_3 ALD膜在SiLK上立即成核，从而形成连续的Al_2O_3膜。此外，QCM测量结果表明TiN ALD在Al_2O_3表面容易成核。 Al_2O_3 ALD粘附层促进了SiLK上连续TiN ALD膜的生长。用逐渐变薄的Al_2O_3 ALD粘附层对在SiLK上制备的TiN ALD膜进行检查，发现10个Al_2O_3 ALD循环足以促进TiN ALD膜的成核。

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