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首页> 外文期刊>Journal of Vacuum Science & Technology >Precision laser micromachining of trenches in GaN on sapphire
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Precision laser micromachining of trenches in GaN on sapphire

机译：蓝宝石上GaN中沟槽的精密激光微加工

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摘要

Trench formation for device isolation on GaN light-emitting diode (LED) wafers via nanosecond ultraviolet laser micromachining is demonstrated. Trenches with smooth sidewalls and flat bottom surfaces are produced. Unlike wafer scribing with laser beams, the formation of trenches requires that the incident fluence is sufficient for laser ablation of GaN, yet low enough to prevent ablation of the sapphire substrate. Owing to the dissimilar ablation thresholds between GaN and sapphire, the etch process terminates automatically at the GaN/sapphire interface. The effect of the following parameters on the trench properties and quality has been investigated: focus offset, pulse energy, pulse repetition rate, scan speed, and the number of scan passes. It was found that optimal focus offset and pulse energy, a high pulse repetition rate, and single cycle of slow scanning are the key factors for obtaining a trench with tapered sidewall and smooth bottom surface, which is suitable for the laying of interconnects conformally across the trench for device interconnection. This technique has been successfully applied to the rapid prototyping of interconnected LED arrays on a single chip, where metal interconnects run continuously across the micromachined trenches to connect the individual LED devices.
机译：演示了通过纳秒级紫外线激光微加工在GaN发光二极管（LED）晶圆上隔离器件的沟槽结构。产生具有光滑侧壁和平坦底表面的沟槽。与用激光束划片不同，沟槽的形成要求入射通量足以对GaN进行激光烧蚀，但又足够低以防止蓝宝石衬底烧蚀。由于GaN和蓝宝石之间的烧蚀阈值不同，蚀刻工艺会在GaN /蓝宝石界面处自动终止。已经研究了以下参数对沟槽特性和质量的影响：聚焦偏移，脉冲能量，脉冲重复率，扫描速度和扫描通过次数。发现最佳聚焦偏移和脉冲能量，高脉冲重复频率以及慢扫描的单个周期是获得具有锥形侧壁和平滑底表面的沟槽的关键因素，该沟槽适合于在整个导体上共形地铺设互连。设备互连的沟槽。该技术已成功应用于单个芯片上互连LED阵列的快速原型制作，其中金属互连在微加工沟槽中连续运行以连接各个LED器件。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第2期|380-385|共6页
  • 作者

    G. Y. Mak; E. Y. Lam; H. W. Choi;

  • 作者单位

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road,Hong Kong, China;

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road,Hong Kong, China;

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road,Hong Kong, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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