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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Advanced carrier depth profiling on Si and Ge with micro four-point probe
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Advanced carrier depth profiling on Si and Ge with micro four-point probe

机译：使用微型四点探针在Si和Ge上进行先进的载流子深度分析

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摘要

In order to reach the ITRS goals for future complementary metal-oxide semiconductor technologies, there is a growing need for the accurate extraction of ultrashallow electrically active dopant (carrier) profiles. In this work, it will be illustrated that this need can be met by the micro four-point probe (M4PP) tool. M4PP sheet resistance measurements taken along beveled Si and Ge blanket shallow structures will be investigated. From the differential sheet resistance changes, the underlying carrier profile can be reconstructed without the need to rely on a complicated contact modeling, i.e., M4PP carrier profiling is an absolute carrier depth profiling technique. On Si, it is found that the more sensitive a structure is to carrier spilling along the bevel, the better the M4PP system performs relative to conventional spreading resistance probe (SRP) due to its much lower probe pressure in combination with its sensitivity to what happens around the probes (and not underneath them). Also for Ge, the same issues change significantly the apparent carrier spilling behavior and improve the final accuracy obtained relative to SRP.
机译：为了达到未来互补金属氧化物半导体技术的ITRS目标，对精确提取超浅电活性掺杂剂（载体）分布图的需求不断增长。在这项工作中，将说明可以通过微型四点探针（M4PP）工具满足此需求。将研究沿斜切的Si和Ge覆盖层浅结构进行的M4PP薄层电阻测量。根据不同的薄层电阻变化，无需依赖复杂的接触模型即可重建基础的载流子分布，即M4PP载流子剖析是绝对的载流子深度剖析技术。在Si上，发现结构对沿斜面溢出的载流子越敏感，由于M4PP系统的探针压力低得多，并且对发生的情况敏感，因此相对于传统的扩展电阻探针（SRP）而言，M4PP系统的性能越好围绕探针（而不是在探针下方）。同样对于Ge来说，相同的问题显着改变了表观的载流子溢出行为，并提高了相对于SRP获得的最终精度。

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