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Diamond films produced by microwave plasma chemical vapor deposition at low temperature and their characterization

机译:微波等离子体化学气相沉积低温制备金刚石薄膜及其表征

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Diamond films were deposited using in CH_4/Ar/H_2 gas system and silicon(111) wafers as substrate in microwave plasma chemical vapor deposition at low temperature of about 350 ℃. The effects of the gas system and layout, different microwave power, and different pretreatment methods of substrate on the microstructure of diamond films are discussed. The diamond film samples were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that diamond (111) Bragg peak of XRD patterns is very weak because of the presence of a non-diamond phase and defects. The SEM images show that diamond films are stacked with regularly arranged and about 200 nm base ball-like diamond secondary nucleation particles. The diamond films consist of particles that are not well-faceted.
机译:在CH_4 / Ar / H_2气体系统中以约350℃的低温微波等离子体化学气相沉积法沉积金刚石膜,并以硅(111)晶片为基材。讨论了气体系统和布局,不同的微波功率以及不同的基材预处理方法对金刚石膜微观结构的影响。通过X射线衍射(XRD)和扫描电子显微镜(SEM)研究了金刚石膜样品。结果表明,由于存在非金刚石相和缺陷,XRD图案的金刚石(111)布拉格峰非常弱。 SEM图像显示金刚石膜堆叠有规则排列并且具有约200nm的基本球形的金刚石二次成核颗粒。金刚石膜由面不齐的颗粒组成。

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