The self-interstitial in silicon and germanium

R.Jones; A. Carvalho; J.P Goss; P.R. Briddon

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The self-interstitial in silicon and germanium

机译：硅和锗中的自填隙

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摘要

Low temperature irradiation experiments show a remarkable contrast between Si and Ge, suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences.

机译：低温辐照实验表明，Si和Ge之间存在明显的对比，表明两种材料中自填隙和空位的行为非常不同。本文回顾了缺陷的理论和实验研究，以试图理解这些差异。

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来源
《Materials Science and Engineering》 |2009年第2009期|112-116|共5页
作者
R.Jones; A. Carvalho; J.P Goss; P.R. Briddon;
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作者单位

School of Physics, University of Exeter, Stacker Road, Exeter EX4 4QL, United Kingdom;

School of Physics, University of Exeter, Stacker Road, Exeter EX4 4QL, United Kingdom Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland;

Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland;

School of Natural Sciences, University of Newcastle upon Tyne. Newcastle upon Tyne NE1 7RU. United Kingdom;

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原文格式 PDF
正文语种 eng
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关键词
irradiation; self-interstitial; vacancy; frenkel pairs; theory;

机译：辐照自我插页式广告;空缺;弗伦克尔对理论;

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专利

1. Identification of the hydrogen-saturated self-interstitials in silicon and germanium [J] . Budde M., Leary P., Goss J., Physical Review, B. Condensed Matter . 1998,第8期

机译：硅和锗中氢饱和的自填隙缝的识别
2. Identification of the hydrogen-saturated self-interstitials in silicon and germanium [J] . Budde M., Leary P., Goss J., Physical Review, B. Condensed Matter . 1998,第8期

机译：硅和锗中氢饱和的自填隙缝的识别
3. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications [J] . S. A. Claussen, K. C. Balram, E. T. Fei, Optical Materials Express . 2012,第10期

机译：用于芯片上光互连应用的硅波导中锗和锗/硅锗锗量子阱的选择性区域生长
4. The Hydogen-Saturated Self-Interstitial in Silicon and Germanium [C] . M.Budde, B.Bech Nielsen, P.Leary, International conference on defects in semiconductors;ICDS-19 . 1997

机译：硅和锗中的氢饱和自填隙
5. Evolution of self-interstitials induced by ion-implantation in silicon germanium alloys. [D] . Crosby, Robert T. 2005

机译：硅锗合金中离子注入引起的自填隙的演变。
6. Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application [O] . Chen Li, Hongxiao Lin, Junjie Li, 2020

机译：用于垂直晶体管应用的磷掺杂硅/硅锗多层结构的生长和选择性蚀刻
7. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications [O] . S. A. Claussen, K. C. Balram, E. T. Fei, 2012

机译：用于片上光学互连应用的硅波导中的锗和锗/硅锗量子孔的选择性区域生长
8. Relative Stability of Silicon Self-Interstitial Defects [R] . Subramanian, G., Jones, K. S., Law, M. E., 2000

机译：硅自间隙缺陷的相对稳定性

The self-interstitial in silicon and germanium

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