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首页> 外文期刊>Microelectronic Engineering >High density of electrodeposited Sn/Ag bumps for flip chip connection
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High density of electrodeposited Sn/Ag bumps for flip chip connection

机译：高密度的电沉积锡/银凸点，用于倒装芯片连接

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摘要

As peripheral pads in commercial chips have a pitch in the neighbourhood of 40-50 μm, a technique that could deposit solder paste directly in such pitch would be of great interest to reduce the overall cost of flip chip. This paper describes a new technique that can considerably reduce the final pitch. The main new feature of this process is that the bump pads can be built directly onto the peripheral ones. An electroplating process allows solder bump formation with a final pitch goal of 40-50 μm and after an accurate reflow process, eutectic Sn-3.5 wt%Ag solder bumps are obtained. In fact, the typical re-routing process can be eliminated and the process cost considerably reduced.
机译：由于商用芯片中的外围焊盘的间距在40至50μm左右，因此以降低间距的总成本降低可直接沉积焊膏的技术将引起人们的极大兴趣。本文介绍了一种可以大大降低最终音高的新技术。此过程的主要新功能是可以将缓冲垫直接构建在外围垫上。电镀工艺允许形成最终节距目标为40-50μm的焊料凸块，并且经过精确的回流工艺后，可获得共晶Sn-3.5 wt％Ag焊料凸块。实际上，可以消除典型的重新路由过程，并大大降低了过程成本。

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