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首页> 外文期刊>Optical and quantum electronics >Design criteria for silicon nanostructures in silicon based triple junction solar cell
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Design criteria for silicon nanostructures in silicon based triple junction solar cell

机译：硅基三结太阳能电池中硅纳米结构的设计标准

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摘要

This study aims to design a novel triple-junction solar cell consisting a monolithically interconnected silicon (Si) bottom cell, quantum dots (QDs) based middle cell, and 3C-SiC top cell. The first set of efficiency limits is calculated based on the detailed balance principle. Maximum conversion efficiencies of 55, 52 and 51 % are obtained for 3C-SiC/Si-QD/Si under blackbody, AMO, and AM1.5D radiations, respectively. The maximum efficiencies are occurred in the middle cell band gap of 1.58, 1.55 and 1.6 eV for blackbody, AMO and AM1.5D radiations, respectively. The special attention is given to the quantum dot layer to obtain a more realistic representation of such materials. Silicon quantum dots with effective band gap embedded in silicon carbide which is manageable with changing in the size of quantum dots. It is investigated with 3D Schrodinger solution. Electronic band gap for arrays of silicon quantum dots in silicon carbide is calculated. Finally, current-voltage and power-voltage characteristics of 3C-SiC/Si-QD/Si tandem solar cell for 2, 2.5, 3, 3.5, 4 and 4.5 nm QDs in diameter is simulated under one sun AMO spectrum. The results show maximum power is achieved for 3 nm QDs. Introduced tandem solar cell is expected to improve performance of silicon based tandem solar cell.
机译：这项研究旨在设计一种新颖的三结太阳能电池，该电池由单片互连的硅（Si）底部电池，基于量子点（QDs）的中间电池和3C-SiC顶部电池组成。第一组效率极限是根据详细的平衡原理计算的。在黑体，AMO和AM1.5D辐射下，3C-SiC / Si-QD / Si的最大转换效率分别为55％，52％和51％。对于黑体，AMO和AM1.5D辐射，最大效率分别发生在1.58、1.55和1.6 eV的中间细胞带隙中。对量子点层给予了特别的关注，以获得这种材料的更真实的表示。具有有效带隙的硅量子点嵌入到碳化硅中，可以通过改变量子点的大小来进行管理。使用3D Schrodinger解决方案进行了研究。计算碳化硅中硅量子点阵列的电子带隙。最后，在一个太阳AMO光谱下，模拟了直径为2、2.5、3、3.5、4、4.5 nm的3C-SiC / Si-QD / Si串联太阳能电池的电流-电压和功率电压特性。结果表明，对于3 nm QD，可实现最大功率。引入的串联太阳能电池有望改善硅基串联太阳能电池的性能。

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  • 来源
    《Optical and quantum electronics》 |2016年第11期|510.1-510.13|共13页
  • 作者

    Hamid Heidarzadeh; Ali Rostand; Mahboubeh Dolatyari; Ghassem Rostami;

  • 作者单位

    Photonics and Nanocrystal Research Laboratory, Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664-16471, Iran;

    Photonics and Nanocrystal Research Laboratory, Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664-16471, Iran,SP-EPT Laboratories, ASEPE Company, Industrial Park of Advanced Technologies, Tabriz 53641-96795, Iran;

    SP-EPT Laboratories, ASEPE Company, Industrial Park of Advanced Technologies, Tabriz 53641-96795, Iran;

    SP-EPT Laboratories, ASEPE Company, Industrial Park of Advanced Technologies, Tabriz 53641-96795, Iran;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Quantum dots; Nanostructure; Tandem solar cell; Silicon solar cell; High efficiency;

    机译：量子点;纳米结构串联太阳能电池;硅太阳能电池;高效率;

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