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Influence of substrate and annealing temperatures on optical properties of RF-sputtered TiO_2 thin films

机译：衬底和退火温度对射频溅射TiO_2薄膜光学性能的影响

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摘要

TiO_2 thin films were deposited on unheated and heated glass substrates at an elevated sputtering pressure of 3 Pa by radio frequency (RF) reactive magnetron sputtering. TiO_2 films deposited at room temperature were annealed in air for 1 h at various temperatures ranging from 300 to 600 ℃. The structural and optical properties of the thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and ultraviolet-visible-near infrared (UV-VIS-NIR) spectrophotome-try. XRD results show that as-grown and post-annealed TiO_2 films have anatase crystal structure. Higher substrate and annealing temperatures result in a slight increase of crystallinity. TiO_2 films deposited at different substrate temperatures exhibit high visible transmittance and the transmittance decreases slightly with an increase in annealing temperature. The refractive indices (at λ = 550 nm) of the as-deposited and annealed films are found to be in the range of 2.31-2.37 and 2.31-2.35, respectively. Extinction coefficient decreases slightly with increasing substrate and annealing temperatures. The indirect and direct optical band gap of the as-grown films increases from 3.39 to 3.42 eV and 3.68 to 3.70 eV, respectively, with the increase of substrate temperatures. Annealed TiO_2 films also exhibit an increase in the values of indirect and direct optical band gap.
机译：通过射频（RF）反应磁控溅射，将TiO_2薄膜以3 Pa的升高溅射压力沉积在未加热和加热的玻璃基板上。室温下沉积的TiO_2薄膜在300至600℃的不同温度下在空气中退火1 h。使用X射线衍射（XRD），场发射扫描电子显微镜（FESEM）和紫外可见近红外（UV-VIS-NIR）分光光度法研究了薄膜的结构和光学性质。 XRD结果表明，成膜后和退火后的TiO_2薄膜具有锐钛矿晶体结构。较高的基材和退火温度会导致结晶度略有增加。在不同的衬底温度下沉积的TiO_2薄膜具有较高的可见光透射率，且透射率随退火温度的升高而略有下降。发现所沉积和退火的膜的折射率（在λ＝ 550nm处）分别在2.31-2.37和2.31-2.35的范围内。消光系数随基材和退火温度的升高而略有降低。随着衬底温度的升高，成膜的薄膜的间接和直接光学带隙分别从3.39 eV增加到3.42 eV，从3.68 eV增加到3.70 eV。退火后的TiO_2薄膜还表现出间接和直接光学带隙值的增加。

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