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首页> 外文期刊>Physical review >Room-temperature skyrmions in strain-engineered FeGe thin films
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Room-temperature skyrmions in strain-engineered FeGe thin films

机译：菌株工程的房间温度臭氧薄膜

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摘要

Skyrmions hold great promise for low-energy consumption and stable high-density information storage, and stabilization of the skyrmion lattice (SkX) phase at or above room temperature is greatly desired for practical use. The topological Hall effect can be used to identify candidate systems above room temperature, a challenging regime for direct observation by Lorentz electron microscopy. Atomically ordered FeGe thin films are grown epitaxially on Ge(111) substrates with ～4% tensile strain. Magnetic characterization reveals enhancement of the Curie temperature to 350 K due to strain, well above the bulk value of 278 K. A strong topological Hall effect was observed between 10 and 330 K. with a significant increase in magnitude observed at 330 K. The increase in magnitude occurs just below the Curie temperature, similar to the onset of the SkX phase in bulk FeGe. The results suggest that strained FeGe films may host a SkX phase above room temperature when significant tensile strain is applied.
机译：Skyrmions对低能耗和稳定的高密度信息存储保持了很大的希望，并且在实际使用中非常需要稳定速度晶格（SKX）相或高于室温的相位。拓扑霍尔效应可用于识别室温以上的候选系统，是通过Lorentz电子显微镜直接观察的具有挑战性的制度。原子排序的费用薄膜在具有〜4％拉伸菌株的Ge（111）底物上外延上生长。磁性表征揭示了由于菌株的浓度为350k的增强，远高于278k的体积值。在10和330k之间观察到强大的拓扑霍米效应。在330 k下观察到幅度的显着增加。增加幅度正低于居里温度，类似于散装费中的SKX阶段的开始。结果表明，当施加显着的拉伸应变时，应变的费用膜可以在室温上举出SKX相。

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  • 来源
    《Physical review》 |2020年第22期|220405.1-220405.7|共7页
  • 作者

    Sujan Budhathoki; Arjun Sapkota; Ka Ming Law; Smriti Ranjit; Bhuwan Nepal; Brian D. Hoskins; Arashdeep Singh Thind; Albina Y. Borisevich; Michelle E. Jamer; Travis J. Anderson; Andrew D. Koehler; Karl D. Hobart; Gregory M. Stephen; Don Heiman; Tim Mewes; Rohan Mishra; James C. Gallagher; Adam J. Hauser;

  • 作者单位

    Department of Physics and Astronomy University of Alabama Tuscaloosa Alabama 35487 USA;

    Department of Physics and Astronomy University of Alabama Tuscaloosa Alabama 35487 USA;

    Department of Physics and Astronomy University of Alabama Tuscaloosa Alabama 35487 USA;

    Department of Physics and Astronomy University of Alabama Tuscaloosa Alabama 35487 USA;

    Department of Physics and Astronomy University of Alabama Tuscaloosa Alabama 35487 USA;

    Physical Measurement laboratory National Institute of Standards and Technology Gaithersburg Maryland 20899 USA;

    Institute of Materials Science & Engineering Washington University in St. Louis One Brookings Drive St. Louis Missouri 63130 USA;

    Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    Physics Department United States Naval Academy Annapolis Maryland 21402 USA;

    U.S. Naval Research Laboratory Washington DC 20375 USA;

    U.S. Naval Research Laboratory Washington DC 20375 USA;

    U.S. Naval Research Laboratory Washington DC 20375 USA;

    Physics Department Northeastern University Boston Massachusetts 02115 USA;

    Physics Department Northeastern University Boston Massachusetts 02115 USA;

    Department of Physics and Astronomy University of Alabama Tuscaloosa Alabama 35487 USA;

    Institute of Materials Science & Engineering Washington University in St. Louis One Brookings Drive St. Louis Missouri 63130 USA Department of Mechanical Engineering & Materials Science Washington University in St. Louis One Brookings Drive St. Louis Missouri 63130 USA;

    U.S. Naval Research Laboratory Washington DC 20375 USA;

    Department of Physics and Astronomy University of Alabama Tuscaloosa Alabama 35487 USA;

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