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首页> 外文期刊>Science of advanced materials >Properties of IGZO Film Deposited by Ar/O-2 Inductively Coupled Plasma Assisted DC Magnetron Sputtering
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Properties of IGZO Film Deposited by Ar/O-2 Inductively Coupled Plasma Assisted DC Magnetron Sputtering

机译：Ar / O-2电感耦合等离子体辅助直流磁控溅射沉积IGZO薄膜的性能

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摘要

In this study, the effects of inductively coupled plasma (ICP) power added to the DC magnetron sputtering of indium gallium zinc oxide (IGZO) using Ar/O-2 on the plasma characteristics and IGZO thin film characteristics were investigated. The addition of ICP power decreased the magnetron voltage and increased the magnetron current due to the increased plasma density near the magnetron surface. The addition of ICP also increased the deposition rate but also increased the surface roughness of the deposited IGZO thin films. When the electrical characteristics of deposited IGZO thin films were measured, the increase of ICP power to 300 W not only increased the carrier concentration from 1.87 x 10(19) to 2.59 x 10(19) cm(-3) but also increased carrier mobility from 14 to 16.7 cm(2)/Vs possibly due to the decreased defects (decreased defect scattering) in the film even with the increased impurity scattering caused by increased carrier concentration. The further increase of ICP power to 500 W slightly decreased the carrier mobility while slightly increasing the carrier concentration due to both the increased impurity scattering by the increased carrier concentration and the increased surface scattering caused by the increased surface roughness. The optical transmittance was not significantly varied with the ICP power and was higher than 80% at for the visible wavelength and the structure of IGZO deposited at room temperature remained amorphous even with the ICP power up to 500 W.
机译：在这项研究中，研究了在使用Ar / O-2的铟镓锌氧化物（IGZO）的直流磁控溅射中添加电感耦合等离子体（ICP）功率对等离子体特性和IGZO薄膜特性的影响。 ICP功率的增加由于磁控管表面附近的等离子体密度增加而降低了磁控管电压并增加了磁控管电流。 ICP的添加还增加了沉积速率，但是也增加了沉积的IGZO薄膜的表面粗糙度。当测量沉积的IGZO薄膜的电特性时，ICP功率增加到300 W不仅将载流子浓度从1.87 x 10（19）增加到2.59 x 10（19）cm（-3），而且还增加了载流子迁移率从14到16.7 cm（2）/ Vs可能是由于薄膜中的缺陷减少（缺陷散射减少），甚至由于载流子浓度增加而导致的杂质散射增加。 ICP功率进一步提高到500 W，由于载流子浓度增加而增加的杂质散射和表面粗糙度增加引起的表面散射增加，使载流子迁移率略有下降，而载流子浓度却略有增加。光学透射率并没有随ICP功率的变化而显着变化，并且在可见光波长下，其透射率高于80％，并且即使ICP功率高达500 W，室温下沉积的IGZO的结构仍保持非晶态。

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  • 来源
    《Science of advanced materials》 |2017年第7期|1187-1192|共6页
  • 作者

    Lee Chul Hee; Kim Tae Hyung; Lee Seung Min; Bae Jeong Wun; Kim Kyong Nam; Yeom Geun Young;

  • 作者单位

    Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, Gyeonggi Do, South Korea;

    Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, Gyeonggi Do, South Korea;

    Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, Gyeonggi Do, South Korea;

    Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, Gyeonggi Do, South Korea;

    Daejeon Univ, Sch Adv Mat Sci & Engn, Daejeon 34520, South Korea;

    Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, Gyeonggi Do, South Korea|Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea;

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  • 正文语种 eng
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  • 关键词

    Plasma; IGZO; Sputter; Mobility;

    机译：等离子;IGZO;溅射;移动性;

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