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Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

机译:氢化非晶硅中光致缺陷产生的分散过程

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摘要

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density N_(ss). The experimental values of β, τ, and N_(ss) are compared with those calculated based on our model of light-induced defect creation in a-Si:H.
机译:对于a-Si:H中的各种照射强度,已经观察到在光照下光致悬挂键的生长曲线。将其拟合到一个扩展的指数函数,然后根据饱和悬挂键密度N_(ss)估算函数中涉及的两个参数β和τ。将β,τ和N_(ss)的实验值与基于我们在a-Si:H中光致缺陷产生模型的计算值进行比较。

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