N_2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire temperature

Yuhei Omori; Akimori Tabata; Akihiro Kondo

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N_2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire temperature

机译：在低线温度下用热线化学气相法在硅薄膜上进行N_2后沉积处理

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摘要

For nitride layer formation on a hydrogenated microcrystalline silicon film surface, post-deposition treatments were carried out using a tungsten wire heated to 1700 ℃ in N_2 (12 Torr) or N_2/H_2 (4 Torr) atmospheres. The nitride layers were investigated with an X-ray photoelectron spectroscopy. The intense peaks due to the Si-N bonds were observed. Those in N_2 treatment were larger with increasing the treating time and decreased with depth direction, while those in N_2/H_2 treatment were virtually unchanged with the treating time and the depth up to about 20 nm. These findings indicate that even at a low wire temperature of 1700 ℃ N_2 molecules decompose sufficiently and nitride layers can be formed when high gas pressures are used.

机译：为了在氢化的微晶硅膜表面上形成氮化物层，使用在N_2（12 Torr）或N_2 / H_2（4 Torr）气氛中加热到1700℃的钨丝进行后沉积处理。用X射线光电子能谱研究氮化物层。观察到由于Si-N键引起的强烈峰。 N_2处理的那些随着处理时间的增加而增大，并且随着深度方向的减小而减小，而N_2 / H_2处理的那些随着处理时间和深度直到约20nm而几乎没有变化。这些发现表明，即使在1700℃的低线温度下，N_2分子也会充分分解，并且当使用高气压时仍会形成氮化物层。

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来源
《Thin Solid Films》 |2011年第14期|p.4535-4537|共3页
作者
Yuhei Omori; Akimori Tabata; Akihiro Kondo;
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作者单位

Department of Electrical Engineering and Computer Science, Nagoya University, C3-l(631) Chikusa, Nagoya, 464-8603, Japan;

Department of Electrical Engineering and Computer Science, Nagoya University, C3-l(631) Chikusa, Nagoya, 464-8603, Japan;

Center of Innovative Photovoltaic Systems, dfu University, 1-1 Yanagido, Cifu, 501 -1193, Japan;

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正文语种 eng
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关键词
hot-wire chemical vapor deposition; surface nitridation; silicon nitride; post-deposition treatment; x-ray photoelectron spectroscopy;

机译：热线化学气相沉积;表面氮化;氮化硅;沉积后处理;x射线光电子能谱;

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N_2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire temperature

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