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首页> 外文期刊>Thin Solid Films >Comparison of growth rate and surface structure of carbon nitride films, pulsed laser deposited in parallel, on axis planes
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Comparison of growth rate and surface structure of carbon nitride films, pulsed laser deposited in parallel, on axis planes

机译：在轴平面上平行沉积脉冲激光的氮化碳膜的生长速率和表面结构的比较

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摘要

Pairs of carbon nitride films have simultaneously been deposited by ArF excimer laser ablation of a graphite target in the 2-50 Pa nitrogen pressure window using a novel configuration. One substrate was parallel and 48 mm apart from the target in the traditional on-axis geometry, while the other was placed off-axis, in the target plane. The pressure dependence of the apparent growth rate, defined as the measured thickness per number of pulses, is significantly different for the two geometries. In the traditional configuration the growth rate is almost constant at approximately 0.003 and 0.025 nm pulse~(-1) for 1 and 5 J cm~(-2), respectively. In the target plane it increases proportionally to the logarithm of N_2 pressure for both fluences, reaching maximum values of 0.009 and 0.030 nm pulse~(-1) at 50 Pa. Complementary surface characterization by atomic force microscopy reveals that films of superior quality can be grown by this novel off-axis geometry, rendering it especially attractive in the high pressure domain.
机译：成对的氮化碳膜已通过ArF受激准分子激光烧蚀，以新颖的配置在2-50 Pa的氮气压力窗口中沉积了石墨靶。在传统的轴上几何形状中，一个基板与目标平行且相距48 mm，而另一基板在目标平面中离轴放置。对于两种几何形状，表观生长速率的压力依赖性（定义为每脉冲数测得的厚度）明显不同。在传统的配置中，对于1和5 J cm〜（-2），生长速率几乎恒定地保持在大约0.003和0.025 nm脉冲〜（-1）。在目标平面中，两种能量通量都与N_2压力的对数成正比增加，在50 Pa时达到最大值0.009和0.030 nm脉冲〜（-1）。通过原子力显微镜进行的互补表面表征表明，高质量的薄膜可以制成通过这种新颖的离轴几何形状生长，使其在高压领域特别有吸引力。

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