Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power

Bogatov AP; Gushchik TI; Drakin AE; Nekrasov AP; Popovichev VV

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Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power

机译：优化激光InGaAs / AlGaAs / GaAs异质结构的波导参数，以获得谐振器中的最大光束宽度和最大输出功率

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The waveguide design of a laser heterostructure is optimised to expand the laser beam in the vertical direction at the output mirror of a laser diode (up to 1.5 mu m at the half intensity for the zero mode). Experimental samples of such diodes operated in the cw transverse single-mode lasing regime up to the output power of 0.5 W. The radiation divergence was 11 degrees - 12 degrees and 4 degrees - 7 degrees in the vertical and horizontal directions, respectively.

机译：激光异质结构的波导设计经过优化，可在垂直方向上在激光二极管的输出镜上扩展激光束（零模的半强度最大为1.5μm）。这种二极管的实验样品在连续横向单模激射条件下工作，输出功率高达0.5W。在垂直和水平方向上的辐射散度分别为11度至12度和4度至7度。

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来源
《Quantum electronics》 |2008年第10期|共5页
作者
Bogatov AP; Gushchik TI; Drakin AE; Nekrasov AP; Popovichev VV;
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正文语种 eng
中图分类光电子技术、激光技术;
关键词
expanded waveguide; transverse single-mode high-power ridge lasers; DIODE-LASERS; OPERATION;

机译：扩展波导;横向单模大功率脊形激光器;二极管激光器;操作;

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专利

1. Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power [J] . Bogatov AP, Gushchik TI, Drakin AE, Quantum electronics . 2008,第10期

机译：优化激光InGaAs / AlGaAs / GaAs异质结构的波导参数，以获得谐振器中的最大光束宽度和最大输出功率
2. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide [J] . Vinokurov D.A., Vasilyeva V.V., Kapitonov V.A., Semiconductors . 2010,第2期

机译：有源区厚度对基于不对称AlGaAs / GaAs / InGaAs异质结构并加宽波导的半导体激光器特性的影响
3. Catastrophic Degradation of Pulsed Lasers Based on AlGaAs/InGaAs/GaAs Heterostructures with Electron-Beam Pumping [J] . M. M. Zverev, V. O. Valdner, N. A. Gamov, Optics and Spectroscopy . 2013,第6期

机译：基于电子束泵浦的基于AlGaAs / InGaAs / GaAs异质结构的脉冲激光的灾难性退化
4. Series resistance and its effect on the maximum output power of 1.5 /spl mu/m strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers [C] . Simmons, J.G., Elenkrig, . 1999

机译：串联电阻及其对1.5 / splμm/ m应变层多量子阱脊形波导InGaAsP激光器的最大输出功率的影响
5. Material, physics, device physics, and technology of high-power pseudomorphic AlGaAs/InGaAs high electron mobility transistors. [D] . Chou, Yeong-Chang. 1997

机译：高功率拟晶AlGaAs / InGaAs高电子迁移率晶体管的材料，物理学，器件物理学和技术。
6. Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers [O] . Giuseppe Tandoi, Charles N. Ironside, John H. Marsh, -1

机译：输出电源限制和被动模式锁定GaAs / Algaas量子阱激光器的改进
7. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy [O] . Eng L. E., Chen T. R., Sanders S., 1989

机译：分子束外延生长的亚毫安级阈值电流伪态InGaAs / AlGaAs埋藏异质结构量子阱激光器
8. Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostructure Lasers Utilizing Native Oxide Mirrors [R] . Ries, M. J., Richard, T. A., Maranowski, S. A., 1994

机译：利用天然氧化物反射镜的alGaas-Gaas-InGaas量子阱异质结构激光器的光电泵浦室温边缘和垂直腔体操作

Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power

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