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Investigation of multi-junction solar cells using electrostatic force microscopy methods

机译：使用静电力显微镜方法研究多结太阳能电池

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Multi-junction III-V solar cells are designed to have a much broader absorption of the solar spectrum than Si-based or single junctions, thus yield the highest conversion. The conversion efficiency can be further scaled with sun concentration. The ability of high conversion efficiencies makes multi-junction prime candidates for fine-tuning explorations aimed at getting closer to the theoretical efficiencies. In this paper, we report on electrostatic force microscopy (EFM) measurements of the built-in potential of multi-junction III-V semiconductor-based solar cells. Kelvin probe force microscopy (KPFM) was employed to qualitatively study the width and electrical properties of individual junctions, i.e., built-in potential, activity, and thickness of the p-n junctions. In addition, the voltage drops across individual solar cell p-n junctions were measured using Kelvin probe microscopy under various operation conditions: dark; illuminated; short-circuit; and biased. We present a method which enables the measurement of a working structure, while focusing on the electrical characteristics of an individual junction by virtue of selecting the spectral range of the illumination used. We show that these pragmatic studies can provide a feedback to improve photovoltaic device design, particularly of operation under a current mismatched situation. This new analysis technique offers additional insights into behavior of the multi-junction solar cell and shows promise for further progress in this field.
机译：多结III-V太阳能电池被设计为比基于Si的结或单结具有更广泛的太阳光谱吸收，因此产生最高的转换率。转换效率可以随着太阳的集中度进一步定标。高转换效率的能力使多结主要候选对象可以进行微调探索，以更接近理论效率。在本文中，我们报告了基于静电力显微镜（EFM）的多结III-V半导体基太阳能电池内置电势的测量。开尔文探针力显微镜（KPFM）用于定性研究单个结的宽度和电学性质，即p-n结的内在电势，活度和厚度。此外，在各种操作条件下，使用开尔文探针显微镜测量了各个太阳能电池p-n结上的电压降。照明短路和偏见。我们提出一种方法，该方法能够测量工作结构，同时通过选择所用照明的光谱范围来关注单个结的电气特性。我们表明，这些务实的研究可以提供反馈，以改善光伏器件的设计，特别是在当前不匹配情况下的操作。这种新的分析技术为多结太阳能电池的性能提供了更多的见识，并显示了在该领域进一步发展的希望。

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