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首页> 外文期刊>Chemistry: A European journal >Uniform Micro-Sized alpha- and beta-Si_3N_4 Thin Ribbons Grown by a High-Temperature Thermal-Decomposition/Nitridation Route
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Uniform Micro-Sized alpha- and beta-Si_3N_4 Thin Ribbons Grown by a High-Temperature Thermal-Decomposition/Nitridation Route

机译：通过高温热分解/氮化工艺生长的均匀的微型化的alpha-和beta-Si_3N_4薄带

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摘要

Uniform micro-sized alpha- and beta-Si_3N_4 thin ribbons have been achieved by a high-temperature thermal-decompositionitridation route.As-grown ribbons were characterized by using powder X-ray diffraction,scanning electron microscopy,transmission electron microscopy,energy-dispersive X-ray spectroscopy,electron energy loss spectroscopy,and cathodoluminescence.These alpha- and beta-Si_3N_4 ribbons are structurally uniform micro-sized single crystals,and have a width of approx2-3 microns,a thickness of approx20-60 nm,and a length,that ranges from several hundreds of microns to the order of millimeters.A room-temperature cathodoluminescence spectrum recorded from these ribbons shows one intensive bule emission peak at approx433 nm.The growth for the new ribbon form of this material is believed to be dominated by a vapor-solid process.
机译：通过高温热分解/氮化途径获得了均匀的微米尺寸α-和β-Si_3N_4薄带。利用粉末X射线衍射，扫描电子显微镜，透射电子显微镜，能量表征了成膜带。 -色散X射线光谱法，电子能量损失光谱法和阴极发光法。这些α-和β-Si_3N_4色带是结构均匀的微细单晶，宽度约为2-3微米，厚度约为20-60 nm，这些带记录的室温阴极发光光谱在约433 nm处显示出一个强烈的蓝光发射峰。据信，这种材料的新带形式的增长是：由气固过程主导。

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