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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Dynamics of the cascade capture of electrons by charged donors in GaAs and InP
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Dynamics of the cascade capture of electrons by charged donors in GaAs and InP

机译：GaAs和InP中带电供体的电子级联捕获动力学

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摘要

The times for the cascade capture of an electron by a charged impurity have been calculated for pulsed and stationary excitations of impurity photoconductivity in GaAs and InP. The characteristic capture times under pulsed and continuous excitations are shown to differ noticeably both from each other and from the value given by the Abakumov-Perel-Yassievich formula for a charged impurity concentration greater than 10(10) cm(-3). The cause of this difference has been established. The Abakumov-Perel-Yassievich formula for the cascade capture cross section in the case of stationary excitation has been generalized. The dependences of the cascade capture rate on the charged impurity concentration in GaAs and InP have been found for three temperatures in the case of pulsed excitation.
机译：对于GaAs和InP中杂质光电导的脉冲激发和静态激发，已经计算出带电杂质对电子进行级联捕获的时间。对于带电杂质浓度大于10（10）cm（-3），脉冲和连续激发下的特征捕获时间显示出彼此明显不同，也不同于Abakumov-Perel-Yassievich公式给出的值。造成这种差异的原因已经确定。归纳了稳态激励情况下级联俘获截面的Abakumov-Perel-Yassievich公式。在脉冲激发的情况下，对于三种温度，已经发现了级联俘获速率对GaAs和InP中带电杂质浓度的依赖性。

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