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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVD
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Time resolved photoluminescence of hydrogenated amorphous silicon carbon thin films deposited by HWCVD

机译：HWCVD沉积的氢化非晶硅碳薄膜的时间分辨光致发光

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摘要

Hydrogenated amorphous silicon carbon (a-SiC:H) alloys deposited by Hot Wire Chemical Vapor Deposition (HWCVD) technique have been extensively characterized by room temperature photoluminescence (PL) and time resolved photoluminescence (TRPL). The films were deposited under different sets of conditions of acetylene (C2H2) flow rate and hydrogen dilution. The temporal behavior of photoluminescence decay measured at peak emission energy exhibits a bi-exponential decay processes with lifetime of the order of a few nanoseconds. The variation in the process conditions leads to variations in the compositional and structural properties of the films, which affect the PL decay. The B-parameter which is the slope of the plot of absorption coefficient with photon energy has been determined for these films along with the carbon content. A systematic correlation between the carbon content and the decay time has been seen which is affected by an increase of hydrogen dilution or the C2H2 flow. (c) 2006 Elsevier B.V. All rights reserved.
机译：通过热线化学气相沉积（HWCVD）技术沉积的氢化非晶硅碳（a-SiC：H）合金已广泛表征为室温光致发光（PL）和时间分辨光致发光（TRPL）。在不同的乙炔（C2H2）流速和氢气稀释条件下沉积薄膜。在峰值发射能量处测量的光致发光衰减的时间行为表现出双指数衰减过程，其寿命约为几纳秒。工艺条件的变化会导致薄膜组成和结构特性的变化，从而影响PL衰减。已经针对这些膜以及碳含量确定了B参数，其为吸收系数随光子能量的曲线的斜率。已经发现碳含量和衰减时间之间存在系统相关性，这受氢稀释或C2H2流量增加的影响。 （c）2006 Elsevier B.V.保留所有权利。

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