The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

Smets AHM; Kondo M

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

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The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

机译：多孔阴极VHF等离子体在高速率沉积微晶硅过程中离子-本体相互作用的作用

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The high rate deposition of microcrystalline silicon (pc-Si:H) by means of the novel multi-hole-cathode very high frequency (MHC-VHF) plasma technique has been studied in the high-pressure depletion region (9.3 Torr). A distinct relationship between vacancy incorporation, the crystalline volume fraction and a qualitative measurement of the energy of the ions bombarding the substrate has been found. The observed relation is explained with the help of an ion-phase-diagram: we claim that the most energetic ions, containing at least one silicon atom, are responsible for the local amorphization of the mu c-Si:H films via the ion induced Si bulk displacement mechanism. (c) 2006 Elsevier B.V. All rights reserved.

机译：在高压耗尽区（9.3托）中，已经研究了通过新颖的多孔阴极超高频（MHC-VHF）等离子体技术进行的微晶硅（pc-Si：H）的高速率沉积。已经发现空位掺入，晶体体积分数和离子轰击基质的能量的定性测量之间存在明显的关系。观察到的关系借助离子相图进行了解释：我们声称，包含至少一个硅原子的最高能离子是通过诱导离子使mu c-Si：H薄膜局部非晶化的原因硅块体位移机制。（c）2006 Elsevier B.V.保留所有权利。

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2006年第20期|共4页
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Smets AHM; Kondo M;
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正文语种 eng
中图分类晶体学;
关键词
silicon; plasma deposition; microcrystallinity; FTIR measurements; Raman spectroscopy; HYDROGENATED AMORPHOUS-SILICON; THIN-FILMS; GROWTH; SURFACE;

机译：硅;等离子体沉积;微晶度;FTIR测量;拉曼光谱;氢化非晶硅;薄膜;生长;表面;

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1. The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma [J] . Smets AHM, Kondo M Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2006,第9a20期

机译：多孔阴极VHF等离子体在高速率沉积微晶硅过程中离子-本体相互作用的作用
2. Development of microcrystalline silicon thin films with high deposition rate (over 10nm/s) using VHF hollow electrode enhanced glow plasma [J] . Takashiri M., Tabuchi T. Surface & Coatings Technology . 2010,第21a22期

机译：使用VHF空心电极增强辉光等离子体开发具有高沉积速率（超过10nm / s）的微晶硅薄膜
3. The role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells [J] . M.N. van den Donker, R. Schmitz, W. Appenzeller, Thin Solid Films . 2006,第Jul期

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4. Optimization of the High Rate Microcrystalline Silicon Deposition Conditions of the Multi-Hole-Cathode Very High Frequency SiH4/H2 Plasma [C] . Smets, A.H.M., Matsui, . 2006

机译：多孔阴极极高频SiH4 / H2等离子体高速率微晶硅沉积条件的优化
5. The role of plasma-surface interactions in process chemistry: Mechanistic studies of a-carbon nitride deposition and sulfur fluoride/oxygen etching of silicon. [D] . Stillahn, Joshua M. 2010

机译：等离子体-表面相互作用在过程化学中的作用：α-碳氮化物沉积和硅的氟化硫/氧蚀刻的机理研究。
6. Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source [O] . Ki Seok Kim, Ki Hyun Kim, You Jin Ji, -1

机译：使用多层推挽式等离子体源的VHF（162 MHz）-PECVD用于柔性有机电子设备的氮化硅沉积
7. Microcrystalline silicon thin film deposition from silicon tetrafluoride: Isolating role of ion energy using tailored voltage waveform plasmas [O] . Junkang Wang, Dmitri Daineka, Mustapha Elyaakoubi, 2019

机译：来自四氟化硅的微晶硅薄膜沉积：使用量身定制的电压波形等离子体隔离离子能量的作用
8. Study of Microcrystalline, Silicon-Carbon p-Layers Prepared by Photo-CVD (Chemical/Vapor Deposition) and Glow Discharge: Final Subcontract Report, December 1, 1987-November 30, 1988. [R] . Schade, H. 1989

机译：通过光CVD（化学/气相沉积）和辉光放电制备的微晶硅 - 碳p层的研究：最终转包报告，1987年12月1日 - 1988年11月30日。

The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

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