• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer
【24h】

Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer

机译：通过添加镍缓冲层增强SiCxNy纳米颗粒薄膜的光致发光

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This work reports the effect of the presence of a Ni buffer layer on the photoluminescence (PL) of SiCxNy nanoparticle films prepared by RF plasma magnetron sputtering process in a reactive N-2 + At + H, gas mixture. An introduction of a Ni buffer of 80 nm or thicker remarkably improves the PL of the films. Annealing in a temperature range of 400-1100 degrees C is found to significantly affect the PL intensity. Optimal PL is achievable at 600 degrees C. X-ray photoelectron and Fourier-transform infrared spectroscopy suggest that the strong PL is directly related to the composition of the SiCxNy, nanoparticle and the concentration of Si-O and Si-N bonds. The results are relevant to the development of wide bandgap optoelectronic devices. (c) 2006 Elsevier B.V. All rights reserved.
机译：这项工作报告了镍缓冲层的存在对在反应性N-2 + At + H混合气体中通过RF等离子体磁控溅射工艺制备的SiCxNy纳米颗粒薄膜的光致发光（PL）的影响。引入80nm或更厚的Ni缓冲剂显着改善了膜的PL。发现在400-1100℃的温度范围内的退火显着影响PL强度。最佳PL可在600摄氏度下获得。X射线光电子和傅立叶变换红外光谱表明，强PL与SiCxNy，纳米粒子的组成以及Si-O和Si-N键的浓度直接相关。该结果与宽带隙光电器件的开发有关。 （c）2006 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号