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Light-induced changes in diphasic nanocrystalline silicon films and solar cells

机译:光诱导的两相纳米晶体硅膜和太阳能电池的变化

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A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.
机译:通过非常高频率的等离子体增强化学气相沉积(VHF-PECVD),使用不同的氢稀释率的硅烷制备了一系列的双相纳米晶体硅膜和太阳能电池。观察到光浸透后,两相太阳能电池的开路电压(V-oc)增加,而非晶硅太阳能电池的开路电压降低。在光浸之前和之后,对一系列的两相硅膜进行拉曼散射光谱分析。发现在光浸泡后,两相纳米晶体硅膜中的纳米结构改变了。晶粒尺寸和晶粒体积分数均减小,而晶界成分增加。这些结果为猜想提供了实验证据,即本征层的纳米结构的变化可能导致光诱导的双相纳米晶体太阳能电池的V-oc增加。 (c)2006 Elsevier B.V.保留所有权利。

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