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Deposition of amorphous fluorosilane thin film on silicon surface: Atomic simulation

机译:硅表面上无定形氟硅烷薄膜的沉积:原子模拟

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摘要

We utilized the Tersoff-Brenner potential form potential to investigate SiF3 continuously bombarding silicon surface with energies of 10, 50 and 100 eV at normal incidence and room temperature by molecular dynamics method. The saturation of deposition yield of F and Si atoms on the surface is observed. A F-containing amorphous layer is formed whose thickness increases with incident energy. In the ejected gas-phase species, F, SiF and SiF2 species increases with increasing incident energy, while the amount of SiF3 species decreases. (c) 2007 Elsevier B.V. All rights reserved.
机译:我们利用Tersoff-Brenner势能势通过分子动力学方法研究了SiF3在法向入射和室温下连续轰击10、50和100 eV能量的硅表面。观察到表面上F和Si原子的沉积产量饱和。形成含F的非晶层,其厚度随入射能量而增加。在喷射的气相物质中,F,SiF和SiF2物质随入射能量的增加而增加,而SiF3物质的量则减少。 (c)2007 Elsevier B.V.保留所有权利。

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