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首页> 外文期刊>Journal of Micromechanics and Microengineering >Design, fabrication and RF performances of two different types of piezoelectrically actuated Ohmic MEMS switches
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Design, fabrication and RF performances of two different types of piezoelectrically actuated Ohmic MEMS switches

机译:两种不同类型的压电驱动Ohmic MEMS开关的设计,制造和RF性能

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In this paper, we have proposed, fabricated and characterized piezoelectrically actuated RF MEMS (radio-frequency micro-electro-mechanical system) switches. They have been designed to operate at a low operation voltage for advanced mobile/wireless handset applications. The proposed switches are largely composed of piezoelectric cantilever actuators with an Au contact electrode and CPW (coplanar wave) transmission lines suspended over the substrate. Two different types of RF MEMS switches have been suggested to find the better geometry. One has the structure of one single piezoelectric cantilever and a contact electrode attached to its edge with three hinges (type-A), and the other contains four piezoelectric cantilevers that are symmetrically combined through each hinge to support a centered contact electrode (type-B). The two different fabricated (type-A and type-B) RF MEMS switches have insertion losses of -0.22 and -0.23 dB at an operation voltage of 2.5 V and a frequency of 2 GHz, respectively. Although the difference in insertion loss is trivial, there exist different dependences of insertion loss on applied voltage between them. The insertion losses of type-A switches are changed with varying operation voltage because the touching area between the contact electrode and the signal transmission lines is variable. Meanwhile, the type-B switches show nearly constant insertion losses regardless of operation voltage. The type-A and type-B switches have isolation values of -40.8 and -42.5 dB at a frequency of 2 GHz, respectively.
机译:在本文中,我们已经提出,制造和表征了压电致动的RF MEMS(射频微机电系统)开关。它们设计用于低电压工作,适合高级移动/无线手机应用。所提出的开关主要由压电悬臂致动器组成,该压电悬臂致动器具有Au接触电极和悬挂在基板上的CPW(共面波)传输线。为了找到更好的几何形状,已经提出了两种不同类型的RF MEMS开关。一个具有一个压电悬臂的结构,其接触电极通过三个铰链连接到其边缘(A型),另一个结构包含四个压电悬臂,通过每个铰链对称地组合在一起以支撑居中的接触电极(B型) )。在2.5 V的工作电压和2 GHz的频率下,两种不同的已制造的(A型和B型)RF MEMS开关的插入损耗分别为-0.22 dB和-0.23 dB。尽管插入损耗的差别很小,但是插入损耗对它们之间施加电压的依赖性不同。由于接触电极和信号传输线之间的接触面积是可变的,因此随着操作电压的变化,A型开关的插入损耗也会发生变化。同时,无论操作电压如何,B型开关的插入损耗几乎恒定。 A型和B型开关在2 GHz频率下的隔离值分别为-40.8和-42.5 dB。

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