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Influence of design and fabrication on RF performance of capacitive RF MEMS switches

机译:设计和制造对电容式RF MEMS开关的RF性能的影响

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摘要

Shunt capacitive radio-frequency microelectromechanical system (RF MEMS) switches were fabricated on silicon substrate and characterized in the RF domain. Various switch typologies were obtained by three different approaches, which are: (1) the change of the bridge geometric parameters, (2) the covering of the actuator with a floating metal, and (3) the deposition of the bridge directly on the actuator. The S parameters of the fabricated switches were measured in the up and down states, observing the impact on the RF performance of the variation of the geometric parameters and the fabrication process. The electromagnetic modelling of the fabricated switches was used to interpret the measured RF behaviour, allowing to elucidate the drawbacks of the non-perfect conforming of the bridge on the actuator. Finally, the reliability of the fabricated RF MEMS switches under a bipolar voltage excitation was evaluated by cycling tests. Hence, the study presented here provides guidelines to solve some issues of the tight correlation between design, fabrication, performance, and reliability of RF MEMS switches, in view of a large-scale development of these devices.
机译:在硅衬底上制造了并联电容式射频微机电系统(RF MEMS)开关,并在RF域进行了表征。通过三种不同的方法可以获得各种开关类型,它们是:(1)改变电桥几何参数;(2)用浮动金属覆盖执行器;(3)将电桥直接沉积在执行器上。在向上和向下状态下测量所制造的开关的S参数,观察几何参数变化和制造工艺对RF性能的影响。所制造的开关的电磁建模用于解释测得的RF行为,从而可以阐明桥在执行器上的非完美贴合性。最后,通过循环测试评估了在双极电压激励下制造的RF MEMS开关的可靠性。因此,鉴于这些器件的大规模开发,此处提出的研究为解决RF MEMS开关的设计,制造,性能和可靠性之间的紧密关联提供了一些指导。

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