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首页> 外文期刊>Journal of Micromechanics and Microengineering >Morphology of macro-pores formed by electrochemical etching of p-type Si
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Morphology of macro-pores formed by electrochemical etching of p-type Si

机译：p型Si电化学刻蚀形成的大孔的形貌

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摘要

Pore formation by electrochemical etching of p-type silicon in organic electrolytes has been studied. (100)-oriented wafers of silicon were prepatterned using a standard lithographic process to form pits of a known spatial period that act as nucleation sites for the pore formation. It was found for the first time that, for the prepatterned samples, two types of macro-pores could be formed on the same substrate. The first type of pore originates from the pits obtained by the prepatterning process. The second type is formed spontaneously as a result of a self-organization process. These 'additional' pores appear if the period of the printed pit pattern is higher than the intrinsic spatial period of random pores for Si, of a certain resistivity. The two types of macro-pores manifest different morphologies. Non-patterned samples oriented in (100), (111) or (110) plane were also investigated.
机译：已经研究了通过电化学蚀刻有机电解质中p型硅形成的孔。使用标准光刻工艺对（100）取向的硅晶片进行预构图，以形成已知空间周期的凹坑，这些凹坑充当孔形成的成核位置。首次发现，对于预图案化的样品，可以在同一基板上形成两种类型的大孔。第一类孔起源于通过预构图工艺获得的凹坑。第二种是由于自组织过程而自发形成的。如果印刷的凹坑图案的周期高于具有一定电阻率的Si随机孔的本征空间周期，则会出现这些“附加”孔。两种类型的大孔表现出不同的形态。还研究了在（100），（111）或（110）平面上取向的非图案化样品。

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